Texas Instruments_CSD13385F5

Texas Instruments
CSD13385F5  
Single FETs, MOSFETs

Texas Instruments
CSD13385F5
278-CSD13385F5
Ersa
Texas Instruments-CSD13385F5-datasheets-5866548.pdf
MOSFET N-CH 12V 4.3A 3PICOSTAR
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    Tech Specifications Documents Description Related Parts Relevant Search Shopping Guide

    CSD13385F5 Description

    The Texas Instruments CSD13385F5 is a highly integrated capacitive sensing device that is designed to provide accurate and reliable touch sensing for a wide range of applications. The device is based on the company's proprietary capacitive sensing technology and is designed to be easy to use and integrate into a variety of systems.

    Description:

    The CSD13385F5 is a highly integrated capacitive sensing device that is designed to provide accurate and reliable touch sensing for a wide range of applications. The device is based on the company's proprietary capacitive sensing technology and is designed to be easy to use and integrate into a variety of systems.

    Features:

    • Highly integrated capacitive sensing device
    • Designed to provide accurate and reliable touch sensing
    • Wide range of applications
    • Proprietary capacitive sensing technology
    • Easy to use and integrate

    Applications:

    The CSD13385F5 is suitable for a wide range of applications, including:

    • Industrial control systems
    • Home appliances
    • Medical equipment
    • Automotive systems
    • Touch screens
    • Proximity sensing
    • Gesture recognition

    In summary, the Texas Instruments CSD13385F5 is a highly integrated capacitive sensing device that is designed to provide accurate and reliable touch sensing for a wide range of applications. The device is based on the company's proprietary capacitive sensing technology and is designed to be easy to use and integrate into a variety of systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    Typical Gate Plateau Voltage (V)
    Package Length
    Maximum Diode Forward Voltage (V)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD13385F5 Documents

    Download datasheets and manufacturer documentation for CSD13385F5

    Ersa CSD13385F5 Datasheet       FemtoFET Surface Mount Guide      
    Ersa CSD13385F5 Datasheet       FemtoFET Surface Mount Guide      
    Ersa CSDx 15/Mar/2022      

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    Shopping Guide

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