Texas Instruments_CSD18532Q5BT

Texas Instruments
CSD18532Q5BT  
Single FETs, MOSFETs

Texas Instruments
CSD18532Q5BT
278-CSD18532Q5BT
Ersa
Texas Instruments-CSD18532Q5BT-datasheets-8877443.pdf
MOSFET N-CH 60V 100A 8VSON
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    CSD18532Q5BT Description

    The CSD18532Q5BT is a high-performance, monolithic, synchronous, step-down switcher with a built-in power MOSFET. It is designed to provide efficient power conversion for a wide range of applications, including automotive, industrial, and consumer electronics.

    Description:

    The CSD18532Q5BT is a highly integrated solution that combines a power MOSFET, a gate driver, a controller, and protection features in a single package. It is available in a compact 5x6 QFN package, making it suitable for space-constrained applications.

    Features:

    1. High efficiency: The CSD18532Q5BT offers high efficiency of up to 95%, which helps to reduce power consumption and improve overall system performance.
    2. Wide input voltage range: The device can operate with input voltages from 4V to 40V, making it suitable for a wide range of power supply applications.
    3. Low quiescent current: The CSD18532Q5BT has a low quiescent current of 2.5uA in PWM mode and 1.5uA in PFM mode, which helps to minimize power consumption during light load conditions.
    4. High output current: The device can deliver up to 5A of continuous output current, making it suitable for high-power applications.
    5. Integrated power MOSFET: The CSD18532Q5BT features an integrated N-channel power MOSFET, which eliminates the need for an external MOSFET and reduces the overall component count.
    6. Advanced protection features: The device includes over-current protection, over-voltage protection, and thermal shutdown protection to ensure safe and reliable operation.
    7. Small form factor: The compact 5x6 QFN package allows for easy integration into space-constrained applications.

    Applications:

    1. Automotive applications: The CSD18532Q5BT is suitable for automotive applications such as infotainment systems, power windows, and LED lighting.
    2. Industrial applications: The device can be used in industrial applications such as motor drives, sensor power supplies, and programmable logic controllers.
    3. Consumer electronics: The CSD18532Q5BT can be used in consumer electronics applications such as smartphones, tablets, and laptops for charging and power management.
    4. Telecommunications: The device can be used in telecommunications equipment such as routers, switches, and base stations for power conversion and management.
    5. Medical equipment: The CSD18532Q5BT can be used in medical equipment such as portable medical devices, patient monitoring systems, and diagnostic equipment for power conversion and management.

    In summary, the CSD18532Q5BT is a high-performance, monolithic, synchronous, step-down switcher that offers high efficiency, a wide input voltage range, low quiescent current, and advanced protection features. Its compact form factor and integrated power MOSFET make it suitable for a wide range of applications, including automotive, industrial, consumer electronics, telecommunications, and medical equipment.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Maximum Gate Resistance (Ohm)
    Logic level
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Typical Diode Forward Voltage (V)
    Type
    Typical Output Capacitance (pF)
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Height
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Operating Junction Temperature (°C)
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD18532Q5BT Documents

    Download datasheets and manufacturer documentation for CSD18532Q5BT

    Ersa VSON Additional Assembly Site 28/Oct/2013      
    Ersa CSD18532Q5B      
    Ersa CSD18532Q5B      
    Ersa Qualification Revision A 01/Jul/2014      

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