The CSD23202W10T from Texas Instruments is a high-performance P-Channel MOSFET from the NexFET™ series, designed for efficient power management in compact, surface-mount applications. With a 12V drain-to-source voltage (Vdss) and 2.2A continuous drain current (Id), this MOSFET is optimized for low-voltage, high-efficiency switching. Its 4DSBGA package ensures minimal footprint, making it ideal for space-constrained designs. The device features a low on-resistance (Rds On) of 53mOhm @ 500mA, 4.5V, reducing conduction losses and improving thermal performance.
The CSD23202W10T stands out for its low Rds On, fast switching, and compact form factor, making it a superior choice for modern power management applications. Its NexFET™ technology ensures high efficiency, while compliance with ROHS3 and REACH underscores its environmental safety. Whether in portable gadgets, power converters, or motor controls, this MOSFET delivers performance, reliability, and space savings—key for next-gen electronics.
Download datasheets and manufacturer documentation for CSD23202W10T