Texas Instruments_CSD23202W10T

Texas Instruments
CSD23202W10T  
Single FETs, MOSFETs

Texas Instruments
CSD23202W10T
278-CSD23202W10T
Ersa
Texas Instruments-CSD23202W10T-datasheets-8045121.pdf
MOSFET P-CH 12V 2.2A 4DSBGA
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CSD23202W10T Description

CSD23202W10T Description

The CSD23202W10T from Texas Instruments is a high-performance P-Channel MOSFET from the NexFET™ series, designed for efficient power management in compact, surface-mount applications. With a 12V drain-to-source voltage (Vdss) and 2.2A continuous drain current (Id), this MOSFET is optimized for low-voltage, high-efficiency switching. Its 4DSBGA package ensures minimal footprint, making it ideal for space-constrained designs. The device features a low on-resistance (Rds On) of 53mOhm @ 500mA, 4.5V, reducing conduction losses and improving thermal performance.

CSD23202W10T Features

  • Low Gate Charge (Qg): 3.8 nC @ 4.5V ensures fast switching and reduced drive losses.
  • Low Input Capacitance (Ciss): 512 pF @ 6V minimizes switching delays.
  • Optimized Drive Voltage: Operates efficiently at 1.5V to 4.5V, compatible with low-voltage logic.
  • Robust Thermal Performance: 1W power dissipation (Ta) ensures reliability under load.
  • Industry-Leading Packaging: Tape & Reel (TR) for automated assembly, MSL 1 (Unlimited) for moisture resistance.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, meeting global environmental standards.

CSD23202W10T Applications

  • Portable Electronics: Ideal for battery-powered devices due to low Rds On and efficient power handling.
  • Load Switching: Suitable for power distribution in IoT modules, wearables, and smartphones.
  • DC-DC Converters: Enhances efficiency in synchronous buck/boost topologies.
  • Motor Control: Provides reliable switching in low-power motor drivers.

Conclusion of CSD23202W10T

The CSD23202W10T stands out for its low Rds On, fast switching, and compact form factor, making it a superior choice for modern power management applications. Its NexFET™ technology ensures high efficiency, while compliance with ROHS3 and REACH underscores its environmental safety. Whether in portable gadgets, power converters, or motor controls, this MOSFET delivers performance, reliability, and space savings—key for next-gen electronics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD23202W10T Documents

Download datasheets and manufacturer documentation for CSD23202W10T

Ersa CSD23202W10      
Ersa CSD23202W10      

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