Texas Instruments
CSD17318Q2  
Single FETs, MOSFETs

Texas Instruments
CSD17318Q2
278-CSD17318Q2
Ersa
Texas Instruments-CSD17318Q2-datasheets-5720959.pdf
MOSFET N-CH 30V 25A 6WSON
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    CSD17318Q2 Description

    CSD17318Q2 is a highly-integrated, high-voltage, gate driver with integrated power MOSFETs designed for brushless DC (BLDC) motor control applications. It is manufactured by Texas Instruments (TI).

    Description:

    The CSD17318Q2 is a single-chip solution that integrates a high-voltage half-bridge gate driver with two N-channel power MOSFETs. It is specifically designed for use in BLDC motor control applications, where high efficiency and high performance are required. The device operates from a wide supply voltage range of 4.75V to 14V, making it suitable for various applications.

    Features:

    1. Integrated high-voltage half-bridge gate driver with two N-channel power MOSFETs.
    2. Wide supply voltage range: 4.75V to 14V.
    3. High-side and low-side gate drive voltage up to 20V.
    4. Programmable dead-time control to minimize shoot-through current.
    5. Under-voltage lockout (UVLO) protection.
    6. Over-current protection with fault reporting and flag pins.
    7. Open-phase protection with fault reporting and flag pins.
    8. Thermal shutdown protection.
    9. Spread spectrum frequency modulation to reduce electromagnetic interference (EMI).
    10. Small package size: 5mm x 7mm QFN package.

    Applications:

    1. Brushless DC (BLDC) motor control in industrial and automotive applications.
    2. Cooling fans and blowers in computers, servers, and telecommunications equipment.
    3. Pump control in HVAC systems.
    4. Electric power steering (EPS) systems in automotive applications.
    5. Robotics and automation systems.
    6. White goods applications, such as washing machines and refrigerators.

    The CSD17318Q2 offers a compact, efficient, and reliable solution for BLDC motor control applications, making it a popular choice for engineers and designers looking to implement high-performance motor control systems.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Logic level
    Qg - Gate Charge
    Power Dissipation (Max)
    Package Height
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Typical Gate Threshold Voltage (V)
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Part Status
    Lead finish / Ball material
    Package Width
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Lead Shape
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Mfr
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD17318Q2 Documents

    Download datasheets and manufacturer documentation for CSD17318Q2

    Ersa CSD17318Q2 Datasheet      
    Ersa CSD17318Q2 Datasheet      

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