Texas Instruments_CSD18511Q5A

Texas Instruments
CSD18511Q5A  
Single FETs, MOSFETs

Texas Instruments
CSD18511Q5A
278-CSD18511Q5A
Ersa
Texas Instruments-CSD18511Q5A-datasheets-9879041.pdf
MOSFET N-CH 40V 159A 8VSON
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    CSD18511Q5A Description

    CSD18511Q5A is a high-performance, single-chip motor controller from Texas Instruments. It is designed to control brushless DC (BLDC) motors in a wide range of applications, including industrial, automotive, and consumer electronics.

    Description:

    The CSD18511Q5A is a highly integrated motor controller that combines a gate driver, power MOSFETs, and control logic in a single package. It is designed to operate with a wide range of BLDC motors, from small, low-power motors to larger, high-power motors.

    Features:

    • Integrated gate driver and power MOSFETs for efficient motor control
    • Wide input voltage range (4.75V to 14V) for compatibility with various power sources
    • High efficiency (up to 98%) for improved power consumption and thermal performance
    • Advanced control algorithms for precise motor speed and torque control
    • Protection features including overcurrent, overvoltage, and undervoltage protection
    • Small package size (5mm x 5mm) for easy integration into compact designs
    • Wide operating temperature range (-40°C to 125°C) for use in harsh environments

    Applications:

    The CSD18511Q5A is suitable for a wide range of applications that require precise motor control, including:

    • Industrial automation and robotics
    • Automotive applications such as electric power steering and window lifts
    • Consumer electronics such as drones, vacuum cleaners, and power tools
    • Medical devices such as infusion pumps and surgical instruments

    Overall, the CSD18511Q5A is a highly versatile and efficient motor controller that can be used in a wide range of applications requiring precise and reliable motor control.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Logic level
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Mfr
    Height
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD18511Q5A Documents

    Download datasheets and manufacturer documentation for CSD18511Q5A

    Ersa CSD18511Q5A      
    Ersa CSD18511Q5A      

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