Texas Instruments_CSD19535KCS

Texas Instruments
CSD19535KCS  
Single FETs, MOSFETs

Texas Instruments
CSD19535KCS
278-CSD19535KCS
Ersa
Texas Instruments-CSD19535KCS-datasheets-7057539.pdf
MOSFET N-CH 100V 150A TO220-3
In Stock : 609

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CSD19535KCS Description

CSD19535KCS Description

The CSD19535KCS is a high-performance N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Texas Instruments. This device features a NexFET™ series, offering superior performance in various applications. With a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 150A at 25°C, the CSD19535KCS is ideal for high-power and high-current applications.

CSD19535KCS Features

  • High Input Capacitance (Ciss): The CSD19535KCS boasts a maximum input capacitance of 7930 pF at 50V, ensuring fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge (Qg): With a maximum gate charge of 101 nC at 10V, this MOSFET reduces switching losses, contributing to higher efficiency.
  • Low Rds On: The device features a maximum Rds On of 3.6 mOhm at 100A and 10V, providing low on-resistance and minimal power dissipation.
  • Robust Gate Drive Voltage: The CSD19535KCS can handle a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation in various applications.
  • Compliance and Environmental Standards: This MOSFET is REACH unaffected, RoHS3 compliant, and not moisture sensitive, making it suitable for a wide range of applications.

CSD19535KCS Applications

The CSD19535KCS is ideal for various high-power and high-current applications, including:

  • Industrial Motor Controls: Due to its high current and voltage ratings, this MOSFET is perfect for motor control applications in industrial settings.
  • Power Supplies: The CSD19535KCS can be used in power supply designs, providing efficient and reliable performance.
  • Automotive Applications: This MOSFET is suitable for automotive applications, such as electric vehicle (EV) charging systems and power management.
  • Renewable Energy Systems: The device can be employed in solar inverters and wind turbine power electronics, where high power and efficiency are crucial.

Conclusion of CSD19535KCS

The CSD19535KCS from Texas Instruments is a powerful and efficient N-Channel MOSFET, offering superior performance in high-power and high-current applications. Its unique features, such as low gate charge, high input capacitance, and low on-resistance, make it an ideal choice for various industries, including industrial motor controls, power supplies, automotive, and renewable energy systems. With its compliance to environmental standards and robust performance, the CSD19535KCS is a reliable and efficient solution for demanding applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD19535KCS Documents

Download datasheets and manufacturer documentation for CSD19535KCS

Ersa CSD195 A/T Chgs 13/Dec/2021      
Ersa CSD19535KCS      
Ersa ID symbolization Change 04/Mar/2020       Mult Dev 15/Apr/2020      

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