Texas Instruments
CSD18537NQ5A
Single FETs, MOSFETs
CSD18537NQ5A
278-CSD18537NQ5A
Texas Instruments-CSD18537NQ5A-datasheets-9259031.pdf
MOSFET N-CH 60V 50A 8VSON
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CSD18537NQ5A Description
The CSD18537NQ5A is a high-performance, single-channel, gate driver IC from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including industrial motor control, power supplies, renewable energy systems, and automotive systems.
Description:
The CSD18537NQ5A is a monolithic gate driver IC that provides high-speed, short-circuit protection, and advanced diagnostics for power switching devices. It features a high-voltage input range of up to 60V and can drive N-channel MOSFETs and IGBTs with a maximum current of ±2.5A.
Features:
- High-speed gate drive: The CSD18537NQ5A provides fast rise and fall times, enabling high-efficiency operation and reducing switching losses.
- Short-circuit protection: The device includes a short-circuit protection feature that limits the gate current during a short-circuit event, protecting the power switching device from damage.
- Advanced diagnostics: The CSD18537NQ5A offers advanced diagnostic features, including over-temperature warning, under-voltage lockout, and open-gate detection.
- Wide input voltage range: The device can operate from a supply voltage as low as 7V, making it suitable for a wide range of applications.
- Low quiescent current: The CSD18537NQ5A has a low quiescent current of only 2.5mA, which helps reduce overall power consumption.
- Small package size: The device is available in a compact 5x6mm QFN package, making it suitable for space-constrained applications.
Applications:
- Industrial motor control: The CSD18537NQ5A can be used to drive power MOSFETs and IGBTs in motor control applications, such as variable frequency drives (VFDs) and servo drives.
- Power supplies: The device can be used in power supply applications, such as AC/DC and DC/DC converters, to drive the power switching devices efficiently and with short-circuit protection.
- Renewable energy systems: The CSD18537NQ5A can be used in renewable energy systems, such as solar inverters and wind turbine converters, to drive the power switching devices with high efficiency and protection.
- Automotive systems: The device is suitable for automotive applications, such as electric vehicle (EV) motor controllers and battery chargers, to drive power MOSFETs and IGBTs with high efficiency and protection.
- Battery management systems: The CSD18537NQ5A can be used in battery management systems to drive power switching devices for battery charging, discharging, and protection.
In summary, the CSD18537NQ5A is a high-performance gate driver IC from Texas Instruments that offers high-speed gate drive, short-circuit protection, and advanced diagnostics for power MOSFETs and IGBTs. It is suitable for a wide range of applications, including industrial motor control, power supplies, renewable energy systems, and automotive systems.
Tech Specifications
Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Rds(on) at VGS=10 V (max) (mΩ)
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Maximum Pulsed Drain Current @ TC=25°C (A)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Power Dissipation on PCB @ TC=25°C (W)
Maximum Gate Resistance (Ohm)
Logic level
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Diode Forward Voltage (V)
Type
Typical Output Capacitance (pF)
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Material
Package Length
QGS (typ) (nC)
REACH
Series
Operating Junction Temperature (°C)
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number
CSD18537NQ5A Documents
Download datasheets and manufacturer documentation for CSD18537NQ5A
CSD18537NQ5A CSD18537NQ5A Related Parts
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