Texas Instruments_CSD17579Q5AT

Texas Instruments
CSD17579Q5AT  
Single FETs, MOSFETs

Texas Instruments
CSD17579Q5AT
278-CSD17579Q5AT
Ersa
Texas Instruments-CSD17579Q5AT-datasheets-8444415.pdf
MOSFET N-CH 30V 25A 8VSON
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CSD17579Q5AT Description

The Texas Instruments CSD17579Q5AT is a highly-integrated, high-voltage, gate driver with integrated power MOSFETs designed for use in brushless DC (BLDC) motor control applications. It is part of the company's portfolio of motor control solutions that are designed to provide high performance and reliability in a wide range of applications.

Description:

The CSD17579Q5AT is a monolithic gate driver with integrated power MOSFETs that can drive high voltage motor windings up to 900V. It is designed to operate with a wide range of microcontrollers and processors, and can be used in a variety of motor control topologies, including three-phase BLDC and permanent magnet stepper motor control.

Features:

  • Integrated high voltage MOSFETs for driving motor windings
  • Wide input voltage range (4.75V to 18V)
  • High efficiency and low power consumption
  • Integrated protection features, including overcurrent, overvoltage, and thermal shutdown
  • Small package size (5mm x 5mm QFN package)
  • Wide operating temperature range (-40°C to +125°C)

Applications:

The CSD17579Q5AT is suitable for a wide range of applications that require high voltage motor control, including:

  • Industrial automation and robotics
  • Automotive applications, such as electric power steering and window lifts
  • HVAC systems, such as fans and pumps
  • Appliances, such as washing machines and refrigerators
  • Medical equipment, such as pumps and surgical tools

Overall, the Texas Instruments CSD17579Q5AT is a versatile and high-performance gate driver that can be used in a wide range of motor control applications. Its integrated power MOSFETs, high efficiency, and robust protection features make it an ideal choice for designers looking for a reliable and cost-effective solution for their motor control needs.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Rds(on) at VGS=10 V (max) (mΩ)
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Maximum Pulsed Drain Current @ TC=25°C (A)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Power Dissipation on PCB @ TC=25°C (W)
Maximum Gate Resistance (Ohm)
Logic level
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Diode Forward Voltage (V)
Type
Typical Output Capacitance (pF)
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Material
Package Length
QGS (typ) (nC)
REACH
Series
Operating Junction Temperature (°C)
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number

CSD17579Q5AT Documents

Download datasheets and manufacturer documentation for CSD17579Q5AT

Ersa CSD17579Q5A      
Ersa CSD17579Q5A      

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