Texas Instruments_CSD23203W

Texas Instruments
CSD23203W  
Single FETs, MOSFETs

Texas Instruments
CSD23203W
278-CSD23203W
Ersa
Texas Instruments-CSD23203W-datasheets-11183298.pdf
MOSFET P-CH 8V 3A 6DSBGA
In Stock : 6964

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CSD23203W Description

CSD23203W Description

The CSD23203W is a P-Channel MOSFET from Texas Instruments, designed for high-performance applications. This NexFET™ series device offers a unique combination of low on-resistance, high input capacitance, and low gate charge, making it ideal for a wide range of applications. With a drain-to-source voltage (Vdss) of 8V and a continuous drain current (Id) of 3A at 25°C, the CSD23203W delivers exceptional performance in demanding environments.

CSD23203W Features

  • Low On-Resistance: The CSD23203W boasts a maximum Rds(on) of 19.4mΩ at 1.5A and 4.5V, ensuring minimal power loss and high efficiency.
  • High Input Capacitance: With a maximum input capacitance (Ciss) of 914pF at 4V, this MOSFET provides fast switching speeds and improved transient response.
  • Low Gate Charge: The maximum gate charge (Qg) of 6.3nC at 4.5V reduces switching losses and improves overall efficiency.
  • Robust Power Dissipation: Capable of handling up to 750mW of power dissipation, the CSD23203W is suitable for high-power applications.
  • Surface Mount Technology: The 6DSBGA package allows for easy integration into surface-mount applications, reducing footprint and improving thermal performance.
  • Compliance and Certifications: The CSD23203W is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with international regulations.

CSD23203W Applications

The CSD23203W is ideal for various applications where high performance and reliability are critical:

  1. Power Management: Due to its low on-resistance and high current handling capabilities, the CSD23203W is perfect for power management circuits in consumer electronics.
  2. Motor Control: Its ability to handle high voltages and currents makes it suitable for motor control applications in industrial and automotive systems.
  3. Automotive Applications: The robust power dissipation and high voltage ratings make the CSD23203W ideal for automotive electronics, such as power windows and seat controls.
  4. Industrial Control: The CSD23203W's high input capacitance and low gate charge make it suitable for high-speed switching in industrial control systems.

Conclusion of CSD23203W

The CSD23203W from Texas Instruments is a high-performance P-Channel MOSFET that offers a unique combination of low on-resistance, high input capacitance, and low gate charge. Its robust power dissipation, compliance with international regulations, and versatile applications make it an ideal choice for demanding applications in power management, motor control, automotive, and industrial control systems. With its NexFET™ technology, the CSD23203W delivers exceptional performance and reliability in a compact 6DSBGA package.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD23203W Documents

Download datasheets and manufacturer documentation for CSD23203W

Ersa CSD23203W      
Ersa Carrier Tape 28/Aug/2018      
Ersa CSD23203W      
Ersa DSBGA/Usip 14/Sep/2016       DSBGA/uSIP 22/Jun/2016      

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