Texas Instruments_CSD25304W1015

Texas Instruments
CSD25304W1015  
Single FETs, MOSFETs

Texas Instruments
CSD25304W1015
278-CSD25304W1015
Ersa
Texas Instruments-CSD25304W1015-datasheets-8473504.pdf
MOSFET P-CH 20V 3A 6DSBGA
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    CSD25304W1015 Description

    CSD25304W1015 is a high-performance, 48-V, 3-A, synchronous step-down regulator from Texas Instruments. It is designed to provide efficient and precise voltage regulation for a wide range of applications.

    Description:

    The CSD25304W1015 is a highly integrated, synchronous step-down regulator that offers high efficiency and low quiescent current. It features a wide input voltage range of 4.5V to 60V and can deliver up to 3A of output current. The device is available in a compact 10mm x 10mm, 24-pin QFN package.

    Features:

    1. Wide input voltage range: 4.5V to 60V
    2. Output current up to 3A
    3. High efficiency: up to 96%
    4. Low quiescent current: 3.2μA in ultra-low-quiescent-current mode
    5. Synchronous rectification for improved efficiency at light loads
    6. Programmable soft-start and output voltage tracking
    7. Over-current protection, over-temperature protection, and output short-circuit protection
    8. Programmable output voltage from 0.9V to 48V
    9. Small footprint: 10mm x 10mm, 24-pin QFN package

    Applications:

    1. Industrial and automotive applications requiring high efficiency and low quiescent current
    2. Telecom and networking equipment
    3. Portable medical devices
    4. Consumer electronics, such as smartphones, tablets, and laptops
    5. Power supplies for IoT devices and wearables
    6. Point-of-Load (POL) converters in distributed power systems
    7. Any application requiring a highly efficient, low-noise, and low-quiescent-current step-down regulator

    The CSD25304W1015 is a versatile and efficient step-down regulator suitable for a wide range of applications where high efficiency, low quiescent current, and a compact form factor are required. Its wide input voltage range and programmable output voltage make it an ideal choice for various power conversion needs.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    Package Length
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD25304W1015 Documents

    Download datasheets and manufacturer documentation for CSD25304W1015

    Ersa CSD25304W1015      

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