Texas Instruments_CSD19532Q5BT

Texas Instruments
CSD19532Q5BT  
Single FETs, MOSFETs

Texas Instruments
CSD19532Q5BT
278-CSD19532Q5BT
Ersa
Texas Instruments-CSD19532Q5BT-datasheets-2872028.pdf
MOSFET N-CH 100V 100A 8VSON
In Stock : 5444

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CSD19532Q5BT Description

The Texas Instruments CSD19532Q5BT is a high-performance, automotive-qualified, smart power switch that is specifically designed for use in electric vehicle (EV) battery management systems. It is a member of the CoolGaN family of products, which are known for their high efficiency, low switching losses, and fast switching speeds.

Description:

The CSD19532Q5BT is a monolithic, synchronous, current-mode, step-down converter that integrates a high-voltage GaN transistor and a gate driver. It is designed to operate from a wide input voltage range of 4.5V to 60V, making it suitable for use in a variety of applications, including electric vehicles, industrial systems, and renewable energy systems.

Features:

  • High efficiency: The CSD19532Q5BT offers high efficiency of up to 98%, which helps to reduce power dissipation and improve overall system performance.
  • Low switching losses: The integrated GaN transistor has low switching losses, which helps to reduce the size of the external components and improve thermal performance.
  • Fast switching speeds: The device is capable of operating at switching frequencies up to 500kHz, which enables smaller external components and improved transient response.
  • Integrated gate driver: The integrated gate driver provides precise control of the GaN transistor, improving overall system performance and reliability.
  • Automotive-qualified: The CSD19532Q5BT is qualified to the stringent requirements of the automotive industry, making it suitable for use in harsh environments and high-reliability applications.

Applications:

  • Electric vehicle battery management systems
  • Industrial motor control systems
  • Renewable energy systems
  • High-voltage DC-DC conversion
  • Any application requiring high efficiency, low switching losses, and fast switching speeds.

In summary, the Texas Instruments CSD19532Q5BT is a high-performance, automotive-qualified, smart power switch that is specifically designed for use in electric vehicle battery management systems. Its high efficiency, low switching losses, fast switching speeds, and integrated gate driver make it an ideal choice for a wide range of applications, including electric vehicles, industrial systems, and renewable energy systems.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Rds(on) at VGS=10 V (max) (mΩ)
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Maximum Pulsed Drain Current @ TC=25°C (A)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Power Dissipation on PCB @ TC=25°C (W)
Maximum Gate Resistance (Ohm)
Logic level
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Diode Forward Voltage (V)
Type
Typical Output Capacitance (pF)
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Material
Package Length
QGS (typ) (nC)
REACH
Series
Operating Junction Temperature (°C)
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number

CSD19532Q5BT Documents

Download datasheets and manufacturer documentation for CSD19532Q5BT

Ersa Qualification Wire Bond 27/May/2014      
Ersa CSD19532Q5B Datasheet      
Ersa CSD19532Q5B Datasheet      
Ersa Qualification Revision A 01/Jul/2014      

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