Texas Instruments_CSD19502Q5B

Texas Instruments
CSD19502Q5B  
Single FETs, MOSFETs

Texas Instruments
CSD19502Q5B
278-CSD19502Q5B
Ersa
Texas Instruments-CSD19502Q5B-datasheets-1967795.pdf
MOSFET N-CH 80V 100A 8VSON
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    ISO9001
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    ISO45001
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    CSD19502Q5B Description

    The Texas Instruments CSD19502Q5B is a highly-integrated, high-voltage half-bridge gate driver IC designed for use in a variety of power conversion applications. This device is specifically designed to drive power MOSFETs and IGBTs in high-voltage applications, such as motor control, power supplies, and renewable energy systems.

    Description:

    The CSD19502Q5B is a monolithic half-bridge gate driver IC that provides high-voltage and high-current drive capability for power MOSFETs and IGBTs. It features a high-voltage boot-strap circuit that allows for efficient and reliable operation in high-voltage environments. The device also includes built-in protection features, such as overcurrent protection, overvoltage protection, and short-circuit protection.

    Features:

    1. High-voltage and high-current drive capability for power MOSFETs and IGBTs
    2. Integrated high-voltage boot-strap circuit
    3. Built-in protection features, including overcurrent protection, overvoltage protection, and short-circuit protection
    4. Wide operating voltage range (up to 60V)
    5. Low propagation delay and high slew rate for fast switching
    6. Small package size (5mm x 5mm QFN package)

    Applications:

    1. Motor control applications, such as brushless DC (BLDC) motors and permanent magnet synchronous motors (PMSM)
    2. Power supply applications, such as AC/DC converters and DC/DC converters
    3. Renewable energy systems, such as solar inverters and wind turbine converters
    4. Electric vehicle (EV) charging systems
    5. Industrial automation and control systems

    In summary, the Texas Instruments CSD19502Q5B is a versatile and reliable high-voltage half-bridge gate driver IC that is well-suited for a wide range of power conversion applications. Its high-voltage and high-current drive capability, integrated boot-strap circuit, and built-in protection features make it an excellent choice for driving power MOSFETs and IGBTs in demanding high-voltage environments.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Maximum Gate Resistance (Ohm)
    Logic level
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Typical Diode Forward Voltage (V)
    Type
    Typical Output Capacitance (pF)
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Height
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Operating Junction Temperature (°C)
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD19502Q5B Documents

    Download datasheets and manufacturer documentation for CSD19502Q5B

    Ersa Qualification Wire Bond 27/May/2014      
    Ersa CSD19502Q5B      
    Ersa CSD19502Q5B      
    Ersa Qualification Revision A 01/Jul/2014      

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