Texas Instruments_CSD17571Q2

Texas Instruments
CSD17571Q2  
Single FETs, MOSFETs

Texas Instruments
CSD17571Q2
278-CSD17571Q2
Ersa
Texas Instruments-CSD17571Q2-datasheets-6746034.pdf
MOSFET N-CH 30V 22A 6SON
In Stock : 7632

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    CSD17571Q2 Description

    The Texas Instruments CSD17571Q2 is a highly-integrated motor control gate driver with integrated power MOSFETs. It is designed for use in brushless DC (BLDC) motor control applications, such as drones, industrial control, and automotive systems.

    Description:

    The CSD17571Q2 is a monolithic gate driver with integrated power MOSFETs that provides a complete solution for driving three-phase BLDC motors. It features a high-voltage half-bridge output stage with a wide input voltage range, making it suitable for a variety of applications. The device also includes advanced protection features, such as overcurrent protection and short-circuit protection, to ensure reliable operation.

    Features:

    • Integrated high-voltage half-bridge output stage with three-phase BLDC motor control
    • Wide input voltage range (4.75V to 40V)
    • Advanced protection features, including overcurrent protection and short-circuit protection
    • Spread spectrum frequency modulation to minimize electromagnetic interference (EMI)
    • Low quiescent current for energy-efficient operation
    • Small package size (5x5mm QFN)

    Applications:

    The CSD17571Q2 is suitable for a wide range of applications that require precise control of BLDC motors, including:

    1. Drones and unmanned aerial vehicles (UAVs)
    2. Industrial control systems, such as robotics and conveyor systems
    3. Automotive systems, such as electric power steering (EPS) and window lift systems
    4. Cooling systems, such as fans and blowers
    5. Pump control systems, such as water pumps and oil pumps

    In summary, the Texas Instruments CSD17571Q2 is a highly-integrated motor control gate driver with integrated power MOSFETs that provides a complete solution for driving three-phase BLDC motors. Its advanced features and wide input voltage range make it suitable for a variety of applications, including drones, industrial control, and automotive systems.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Logic level
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Development Kit
    Package Height
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Lead Shape
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Mfr
    Height
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD17571Q2 Documents

    Download datasheets and manufacturer documentation for CSD17571Q2

    Ersa Mult Devices 23/Oct/2017      
    Ersa CSD17571Q2      
    Ersa CSD17571Q2      
    Ersa Marking Standardization 29/Jan/2015      

    Shopping Guide

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