Texas Instruments_CSD17576Q5B

Texas Instruments
CSD17576Q5B  
Single FETs, MOSFETs

Texas Instruments
CSD17576Q5B
278-CSD17576Q5B
Ersa
Texas Instruments-CSD17576Q5B-datasheets-4559855.pdf
MOSFET N-CH 30V 100A 8VSON
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CSD17576Q5B Description

The CSD17576Q5B is a high-performance, monolithic, synchronous, step-down (buck) regulator from Texas Instruments. It is designed to provide efficient and precise voltage regulation for a wide range of applications. Here's a brief description, features, and applications of the CSD17576Q5B:

Description:

The CSD17576Q5B is a highly integrated, high-efficiency, step-down regulator that can operate with input voltages up to 28V and provide output voltages as low as 0.9V. It is available in a compact 5mm x 6mm QFN package, making it suitable for space-constrained applications.

Features:

  1. Wide input voltage range: 4.5V to 28V
  2. Output voltage as low as 0.9V
  3. High efficiency up to 96%
  4. Synchronous rectification for improved efficiency
  5. Programmable soft-start
  6. Integrated under-voltage lockout (UVLO)
  7. Over-current protection (OCP)
  8. Over-temperature protection (OTP)
  9. Small package size: 5mm x 6mm QFN
  10. Low quiescent current: 35µA (typical)

Applications:

  1. Portable devices: Smartphones, tablets, and wearables
  2. Power banks and battery chargers
  3. IoT devices and smart home applications
  4. Automotive applications: Infotainment systems, instrument clusters, and lighting
  5. Industrial control systems and motor drives
  6. LED lighting and driver circuits
  7. Medical equipment and portable medical devices
  8. Telecommunication equipment and base stations

The CSD17576Q5B is a versatile and efficient step-down regulator suitable for a wide range of applications requiring precise voltage regulation and high efficiency. Its compact package and integrated protection features make it an ideal choice for space-constrained and power-sensitive designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD17576Q5B Documents

Download datasheets and manufacturer documentation for CSD17576Q5B

Ersa CSD17576Q5B Datasheet      
Ersa CSD17576Q5B Datasheet      

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