Texas Instruments_CSD19538Q3A

Texas Instruments
CSD19538Q3A  
Single FETs, MOSFETs

Texas Instruments
CSD19538Q3A
278-CSD19538Q3A
Ersa
Texas Instruments-CSD19538Q3A-datasheets-12633898.pdf
MOSFET N-CH 100V 15A 8VSON
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    CSD19538Q3A Description

    The Texas Instruments CSD19538Q3A is a highly-integrated, smart gate driver that is specifically designed for use in battery-powered applications. It is a member of the company's Smart Gate Driver family, which is known for its ability to improve efficiency and reduce system costs in a variety of applications.

    Description:

    The CSD19538Q3A is a highly-integrated smart gate driver that is designed to provide efficient and reliable power management in battery-powered applications. It is a member of Texas Instruments' Smart Gate Driver family, which is known for its ability to improve efficiency and reduce system costs.

    Features:

    The CSD19538Q3A offers a range of features that make it an ideal choice for use in battery-powered applications. Some of its key features include:

    1. High Efficiency: The device is designed to operate with high efficiency, which helps to extend the life of the battery and reduce overall system costs.
    2. Integrated Gate Drivers: The device includes integrated gate drivers, which help to reduce the number of external components required and simplify the overall system design.
    3. Protection Features: The CSD19538Q3A includes a range of protection features, such as overcurrent protection and short-circuit protection, which help to protect the system from damage and ensure reliable operation.
    4. Wide Input Voltage Range: The device is designed to operate over a wide input voltage range, making it suitable for use in a variety of applications.
    5. Small Package Size: The CSD19538Q3A is available in a compact package, which helps to save space and reduce overall system costs.

    Applications:

    The CSD19538Q3A is suitable for use in a variety of battery-powered applications, including:

    1. Portable Devices: The device's high efficiency and integrated gate drivers make it an ideal choice for use in portable devices, such as smartphones and laptops.
    2. Power Tools: The device's wide input voltage range and protection features make it well-suited for use in power tools, such as drills and saws.
    3. Industrial Equipment: The CSD19538Q3A can also be used in industrial equipment, such as robotics and automation systems, where high efficiency and reliable operation are critical.
    4. Medical Devices: The device's small package size and protection features make it well-suited for use in medical devices, such as portable defibrillators and insulin pumps.

    In summary, the Texas Instruments CSD19538Q3A is a highly-integrated smart gate driver that is designed to provide efficient and reliable power management in a variety of battery-powered applications. Its high efficiency, integrated gate drivers, protection features, wide input voltage range, and small package size make it an ideal choice for use in portable devices, power tools, industrial equipment, and medical devices.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Gate Resistance (Ohm)
    Logic level
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Power Dissipation (Max)
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Typical Diode Forward Voltage (V)
    Type
    Typical Output Capacitance (pF)
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Height
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Operating Junction Temperature (°C)
    Pd - Power Dissipation
    Base Product Number

    CSD19538Q3A Documents

    Download datasheets and manufacturer documentation for CSD19538Q3A

    Ersa CSD19538Q3A Datasheet      
    Ersa CSD19538Q3A Datasheet      

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