The CSD16412Q5A is a high-performance N-channel MOSFET from Texas Instruments, designed for demanding applications that require efficient power management and control. This device is part of the NexFET™ series, known for its superior performance and reliability. With a drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) of 14A at 25°C and 52A at Tc, the CSD16412Q5A is capable of handling high power applications with ease.
CSD16412Q5A Features
Technology: MOSFET (Metal Oxide) - Utilizing advanced MOSFET technology for improved performance and reliability.
Input Capacitance (Ciss): 530 pF @ 12.5 V - Minimizes input capacitance for faster switching and reduced power loss.
Gate Charge (Qg): 3.8 nC @ 4.5 V - Reduces the gate charge, enabling faster switching and lower power consumption.
Rds On (Max): 11mOhm @ 10A, 10V - Offers low on-resistance for efficient power delivery.
Vgs(th) (Max): 2.3V @ 250µA - Provides a low threshold voltage for easier gate drive and control.
Mounting Type: Surface Mount - Facilitates easy integration into surface mount technology (SMT) processes.
Power Dissipation (Max): 3W (Ta) - Capable of dissipating high power levels, making it suitable for power-intensive applications.
RoHS Status: ROHS3 Compliant - Ensures environmental compliance and adherence to global regulations.
CSD16412Q5A Applications
The CSD16412Q5A is ideal for a variety of applications where high power handling, efficiency, and reliability are paramount:
Industrial Automation: Due to its high current and voltage ratings, it is suitable for motor control and power switching in industrial settings.
Automotive Systems: The device's robustness and low on-resistance make it an excellent choice for automotive power management systems.
Renewable Energy: Its ability to handle high power levels and its compliance with environmental regulations make it suitable for solar power inverters and wind energy systems.
Consumer Electronics: In high-power consumer devices such as power supplies and chargers, the CSD16412Q5A ensures efficient power delivery and heat management.
Conclusion of CSD16412Q5A
The CSD16412Q5A from Texas Instruments stands out as a superior choice for applications demanding high power handling and efficiency. Its low on-resistance, fast switching capabilities, and compliance with environmental standards make it an ideal component for a wide range of electronic devices. With its NexFET™ series heritage, the CSD16412Q5A offers a reliable and high-performance solution for engineers designing next-generation power electronics.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
CSD16412Q5A Documents
Download datasheets and manufacturer documentation for CSD16412Q5A
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Shipping Rate
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