Texas Instruments
CSD16407Q5  
Single FETs, MOSFETs

Texas Instruments
CSD16407Q5
278-CSD16407Q5
Ersa
Texas Instruments-CSD16407Q5-datasheets-11778872.pdf
MOSFET N-CH 25V 31A/100A 8VSON
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    CSD16407Q5 Description

    CSD16407Q5 is a monolithic smart power switch developed by Texas Instruments. It is designed to provide efficient and reliable power switching in various applications. Here is a description of the model along with its features and applications:

    Description:

    The CSD16407Q5 is a highly-integrated power switch that combines a MOSFET with a co-packaged gate driver. It is designed to provide efficient power switching in a wide range of applications, including motor control, lighting, and power management systems.

    Features:

    1. Integrated high voltage MOSFET and gate driver: The CSD16407Q5 features an integrated high voltage MOSFET and gate driver, which simplifies the design and reduces the component count in power switching applications.
    2. Low on-resistance: The device has a low on-resistance (RDS(on)) of 6.5 mΩ max, which helps to minimize power losses and improve efficiency.
    3. High switching speed: The CSD16407Q5 can operate at high switching speeds, making it suitable for high-frequency applications.
    4. Overcurrent protection: The device features overcurrent protection to protect the system from damage due to excessive current flow.
    5. Thermal shutdown: The CSD16407Q5 has a thermal shutdown feature that protects the device from overheating.
    6. Small package size: The device is available in a compact 5x6 QFN package, which helps to save space on the printed circuit board (PCB).

    Applications:

    1. Motor control: The CSD16407Q5 can be used in brushless DC (BLDC) motor control applications, such as in drones, robotics, and industrial automation systems.
    2. Lighting: The device can be used in LED lighting applications, such as in streetlights, automotive headlights, and indoor lighting systems, to provide efficient power switching and control.
    3. Power management: The CSD16407Q5 can be used in power management systems, such as in battery chargers, power supplies, and energy harvesting systems, to provide efficient power switching and control.
    4. Industrial control: The device can be used in various industrial control applications, such as in conveyor systems, robotic arms, and manufacturing equipment, to provide efficient power switching and control.

    In summary, the Texas Instruments CSD16407Q5 is a highly-integrated power switch that offers efficient and reliable power switching in a wide range of applications. Its features, such as low on-resistance, high switching speed, and overcurrent protection, make it an ideal choice for motor control, lighting, power management, and industrial control applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Series
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD16407Q5 Documents

    Download datasheets and manufacturer documentation for CSD16407Q5

    Ersa Qualification Wire Bond 27/May/2014      
    Ersa CSD16407Q5      
    Ersa CSD16407Q5      
    Ersa Qualification Revision A 01/Jul/2014      

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