Texas Instruments_CSD16406Q3

Texas Instruments
CSD16406Q3  
Single FETs, MOSFETs

Texas Instruments
CSD16406Q3
278-CSD16406Q3
Ersa
Texas Instruments-CSD16406Q3-datasheets-11785151.pdf
MOSFET N-CH 25V 19A/60A 8VSON
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    CSD16406Q3 Description

    The CSD16406Q3 is a high performance, 16-channel, capacitive touch sensing controller from Texas Instruments. It is designed to provide a highly accurate and reliable solution for capacitive touch sensing applications.

    Description:

    The CSD16406Q3 is a highly integrated, low power, capacitive touch sensing controller that supports up to 16 capacitive sensing channels. It features a proprietary algorithm that enables it to detect touch events with high accuracy, even in noisy environments. The device also includes a variety of built-in diagnostic and protection features to ensure reliable operation.

    Features:

    • 16 capacitive sensing channels
    • Proprietary algorithm for accurate touch detection
    • Low power consumption
    • Built-in diagnostic and protection features
    • Wide supply voltage range (2.7V to 5.5V)
    • Small package size (QFN package)

    Applications:

    The CSD16406Q3 is suitable for a wide range of applications that require capacitive touch sensing, including:

    • Consumer electronics (e.g. smartphones, tablets, remote controls)
    • Industrial controls (e.g. touch-based control panels)
    • Automotive controls (e.g. infotainment systems, climate control panels)
    • Appliance controls (e.g. touch-based oven controls)
    • Medical equipment (e.g. touch-based diagnostic equipment)

    In summary, the CSD16406Q3 is a highly capable capacitive touch sensing controller that offers high accuracy, low power consumption, and a wide range of features. It is suitable for a variety of applications and is available in a compact package size.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    Maximum Gate Resistance (Ohm)
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Maximum Diode Forward Voltage (V)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD16406Q3 Documents

    Download datasheets and manufacturer documentation for CSD16406Q3

    Ersa Qualification Wire Bond 27/May/2014      
    Ersa CSD16406Q3      
    Ersa CSD16406Q3      
    Ersa Qualification Revision A 01/Jul/2014      

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