The Texas Instruments CSD17579Q5A is a highly-integrated, high-voltage, gate driver with integrated MOSFETs designed for use in a variety of applications, including industrial motor control, renewable energy systems, and automotive systems.
Description:
The CSD17579Q5A is a single-channel gate driver with integrated high- and low-side MOSFETs. It is capable of driving high-voltage MOSFETs and IGBTs with voltage ratings up to 900V. The device is available in a compact 5x6mm QFN package, making it well-suited for use in space-constrained applications.
Features:
Integrated high- and low-side MOSFETs for efficient power switching
Capable of driving high-voltage MOSFETs and IGBTs with voltage ratings up to 900V
Wide input voltage range of 4.75V to 28V
High-speed switching with typical propagation delay of 22ns
Built-in desaturation and short-circuit protection
Spread-cycle blanking and under-voltage lockout (UVLO) protection
Spread-spectrum clock for reduced electromagnetic interference (EMI)
Small 5x6mm QFN package for space-constrained applications
Applications:
The CSD17579Q5A is suitable for a wide range of applications, including:
Industrial motor control: The device's high-voltage capability and integrated gate driver make it well-suited for use in motor control applications, such as in factory automation and robotics.
Renewable energy systems: The CSD17579Q5A can be used in power conversion systems for renewable energy applications, such as solar panel inverters and wind turbine converters.
Automotive systems: The device's high-voltage capability and robust protection features make it suitable for use in automotive systems, such as electric vehicle (EV) motor controllers and battery management systems.
Power supplies: The CSD17579Q5A can be used in high-voltage power supply applications, such as in uninterruptible power supplies (UPS) and telecom power systems.
Battery charging systems: The device's high-voltage and high-current capability make it suitable for use in battery charging systems, such as electric vehicle chargers and energy storage systems.
In summary, the Texas Instruments CSD17579Q5A is a versatile, high-voltage gate driver with integrated MOSFETs that offers a range of features and protection mechanisms, making it suitable for a variety of applications in industrial, renewable energy, automotive, and power supply systems.
Tech Specifications
Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Automotive
RoHS
Maximum IDSS (uA)
REACH Status
Channel Type
Rds(on) at VGS=10 V (max) (mΩ)
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Maximum Pulsed Drain Current @ TC=25°C (A)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Power Dissipation on PCB @ TC=25°C (W)
Maximum Gate Resistance (Ohm)
Logic level
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Diode Forward Voltage (V)
Type
Typical Output Capacitance (pF)
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Material
Package Length
QGS (typ) (nC)
REACH
Series
Operating Junction Temperature (°C)
Pd - Power Dissipation
Base Product Number
CSD17579Q5A Documents
Download datasheets and manufacturer documentation for CSD17579Q5A
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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