Texas Instruments_TPS1101D

Texas Instruments
TPS1101D  
Single FETs, MOSFETs

Texas Instruments
TPS1101D
278-TPS1101D
Ersa
Texas Instruments-TPS1101D-datasheets-3868594.pdf
MOSFET P-CH 15V 2.3A 8SOIC
In Stock : 601

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    TPS1101D Description

    Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the TPS1101D belongs to can be classified under the Discrete Semiconductors. TPS1101D is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. TPS1101D provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Texas Instruments plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Texas Instruments is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Texas Instruments builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    FET Type
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Product
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    TPS1101D Documents

    Download datasheets and manufacturer documentation for TPS1101D

    Ersa TPS1101, TPS1101Y      
    Ersa TPS1101, TPS1101Y      
    Ersa Mult Devices Font 21/Apr/2018       Design 25/Feb/2022      

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