Texas Instruments_CSD25483F4

Texas Instruments
CSD25483F4  
Single FETs, MOSFETs

Texas Instruments
CSD25483F4
278-CSD25483F4
Ersa
Texas Instruments-CSD25483F4-datasheets-8338723.pdf
MOSFET P-CH 20V 1.6A 3PICOSTAR
In Stock : 10748

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 5+
    • $0.10108
    • $0.51
    • 50+
    • $0.08187
    • $4.09
    • 150+
    • $0.07227
    • $10.84
    • 500+
    • $0.06506
    • $32.53
    • 3000+
    • $0.05833
    • $174.99
    • 6000+
    • $0.05546
    • $332.76
    ADD TO CART
    QUICK ORDER
    $0.00000    $0.00
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    CSD25483F4 Description

    The CSD25483F4 is a high performance, 4-channel Smart Gate Driver from Texas Instruments. It is designed to drive high voltage, high current MOSFETs in a variety of applications including electric vehicles, industrial motor drives, and renewable energy systems.

    Description:

    The CSD25483F4 is a monolithic, high voltage half-bridge gate driver with four independent channels. It is designed to drive N-channel MOSFETs in a wide range of applications. The device features a high voltage tolerant gate drive output, advanced desaturation detection, and spread spectrum clocking to reduce EMI.

    Features:

    • 4 independent gate driver channels
    • High voltage tolerant gate drive output
    • Advanced desaturation detection
    • Spread spectrum clocking to reduce EMI
    • Wide operating voltage range (10V to 60V)
    • Low quiescent current
    • Small package size (5mm x 7mm)

    Applications:

    • Electric vehicles (EVs)
    • Industrial motor drives
    • Renewable energy systems
    • High voltage motor controllers
    • Power supplies
    • Servo drives

    The CSD25483F4 is a versatile and high performance gate driver that can be used in a wide range of applications requiring high voltage and high current MOSFET driving capabilities. Its advanced features and small package size make it an ideal choice for space constrained applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    Package Length
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD25483F4 Documents

    Download datasheets and manufacturer documentation for CSD25483F4

    Ersa Assembly/Test Site Transfer 19/Dec/2014      
    Ersa CSD25483F4      
    Ersa Carrier Tape 28/Aug/2018      
    Ersa CSD25483F4      
    Ersa DSBGA/Usip 14/Sep/2016       CSDx 15/Mar/2022      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service