Texas Instruments_CSD18534Q5AT

Texas Instruments
CSD18534Q5AT  
Single FETs, MOSFETs

Texas Instruments
CSD18534Q5AT
278-CSD18534Q5AT
Ersa
Texas Instruments-CSD18534Q5AT-datasheets-7358319.pdf
MOSFET N-CHANNEL 60V 50A 8VSON
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    CSD18534Q5AT Description

    The Texas Instruments CSD18534Q5AT is a highly-integrated, single-chip gate driver with integrated power MOSFETs designed for brushless DC (BLDC) motor control applications. It is a member of the CoolGaN power stage family, which is known for its high efficiency, low thermal dissipation, and fast switching capabilities.

    Description:

    The CSD18534Q5AT is a 3-phase, 6-MOSFET full-bridge gate driver IC with integrated power MOSFETs. It is housed in a 5x5mm QFN package. The device is designed to provide a complete solution for driving and controlling BLDC motors in various applications.

    Features:

    1. Integrated 600V, 2.5A power MOSFETs for all three phases.
    2. High-side and low-side gate driver with charge pump and bootstrap diode.
    3. Spread spectrum frequency modulation to reduce electromagnetic interference (EMI).
    4. Programmable dead time and switching frequency.
    5. Overcurrent protection, undervoltage lockout, and open-phase protection.
    6. Power-good indicator and fault reporting.
    7. Spread-cycle dithering for reduced acoustic noise.
    8. Small package size (5x5mm QFN) for space-constrained applications.

    Applications:

    1. Brushless DC motor control in industrial and automotive applications.
    2. Cooling fans and pumps in computer systems and telecommunications equipment.
    3. HVAC systems for residential and commercial buildings.
    4. Robotics and automation systems.
    5. Electric vehicles (EVs) and hybrid electric vehicles (HEVs) for traction motor control.
    6. White goods appliances, such as refrigerators, washing machines, and air conditioners.

    The CSD18534Q5AT is a versatile and efficient solution for BLDC motor control applications, offering a combination of high performance, integrated power MOSFETs, and advanced protection features in a compact package.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Drain Source Resistance (MOhm)
    Logic level
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Mfr
    Height
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD18534Q5AT Documents

    Download datasheets and manufacturer documentation for CSD18534Q5AT

    Ersa CSD18534Q5A Datasheet      
    Ersa CSD18534Q5A Datasheet      

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