The CSD17311Q5 from Texas Instruments is a high-performance N-channel MOSFET designed for power management applications. Part of the NexFET™ series, it features a 30V drain-to-source voltage (Vdss) and delivers 32A continuous drain current (Id) at 25°C (Ta), or 100A when mounted on a heatsink (Tc). With an ultra-low on-resistance (Rds(on)) of just 2mΩ at 30A and 8V gate drive, this MOSFET minimizes conduction losses, improving efficiency in high-current applications. Its surface-mount 8VSON package ensures compact PCB integration, while Tape & Reel (TR) packaging facilitates automated assembly.
The CSD17311Q5 stands out for its ultra-low Rds(on), high current capacity, and fast switching, making it a superior choice for power-efficient designs. Its NexFET™ technology and 8VSON packaging provide a balance of performance and space savings, ideal for modern high-density PCBs. Whether in automotive, industrial, or computing applications, this MOSFET delivers reliable, high-efficiency power switching with compliance to global environmental standards.
Download datasheets and manufacturer documentation for CSD17311Q5