Texas Instruments_CSD17311Q5

Texas Instruments
CSD17311Q5  
Single FETs, MOSFETs

Texas Instruments
CSD17311Q5
278-CSD17311Q5
Ersa
Texas Instruments-CSD17311Q5-datasheets-6950832.pdf
MOSFET N-CH 30V 32A/100A 8VSON
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CSD17311Q5 Description

CSD17311Q5 Description

The CSD17311Q5 from Texas Instruments is a high-performance N-channel MOSFET designed for power management applications. Part of the NexFET™ series, it features a 30V drain-to-source voltage (Vdss) and delivers 32A continuous drain current (Id) at 25°C (Ta), or 100A when mounted on a heatsink (Tc). With an ultra-low on-resistance (Rds(on)) of just 2mΩ at 30A and 8V gate drive, this MOSFET minimizes conduction losses, improving efficiency in high-current applications. Its surface-mount 8VSON package ensures compact PCB integration, while Tape & Reel (TR) packaging facilitates automated assembly.

CSD17311Q5 Features

  • Low Rds(on): 2mΩ @ 30A, 8V ensures minimal power dissipation.
  • High Current Handling: Supports 32A (Ta) / 100A (Tc), ideal for demanding loads.
  • Fast Switching: Low gate charge (Qg) of 31nC @ 4.5V and input capacitance (Ciss) of 4280pF @ 15V enhance switching efficiency.
  • Robust Drive Voltage Range: Operates efficiently at 3V to 8V gate drive.
  • Reliable & Compliant: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) for broad industrial use.
  • Thermal Performance: 3.2W max power dissipation ensures stability under load.

CSD17311Q5 Applications

  • DC-DC Converters & Voltage Regulators: Optimized for synchronous buck converters in computing and telecom.
  • Motor Drives & H-Bridges: Low Rds(on) reduces heat in brushed/BLDC motor controllers.
  • Battery Management Systems (BMS): Efficient power switching in Li-ion/PbA protection circuits.
  • Load Switches & Hot-Swap Circuits: High current tolerance suits server/SSD power distribution.
  • Automotive & Industrial Power Systems: Compact footprint and reliability for 12V/24V systems.

Conclusion of CSD17311Q5

The CSD17311Q5 stands out for its ultra-low Rds(on), high current capacity, and fast switching, making it a superior choice for power-efficient designs. Its NexFET™ technology and 8VSON packaging provide a balance of performance and space savings, ideal for modern high-density PCBs. Whether in automotive, industrial, or computing applications, this MOSFET delivers reliable, high-efficiency power switching with compliance to global environmental standards.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Operating Junction Temperature (°C)
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD17311Q5 Documents

Download datasheets and manufacturer documentation for CSD17311Q5

Ersa Qualification Assembly/Test Site 03/Mar/2014      
Ersa CSD17311Q5      
Ersa CSD17311Q5      
Ersa Qualification Revision A 01/Jul/2014      

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