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Microsemi
JANTXV2N6796U
278-JANTXV2N6796U
PDF Datasheet
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-16
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Tech Specifications
Package/Case
CLCC
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
JANTXV2N6796U Description
N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Surface Mount 18-ULCC (9.14x7.49)
FAQ
What voltage specification is listed for JANTXV2N6796U?
The listed voltage-related specification for JANTXV2N6796U is 100V.
What is JANTXV2N6796U?
What package or case is JANTXV2N6796U available in?
What is the mounting type of JANTXV2N6796U?
Is JANTXV2N6796U currently in stock?
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