STMicroelectronics_PD57070-E
original

STMicroelectronics
PD57070-E

285-PD57070-E
PDF Datasheet
RF POWER transistor, LdmoST plastic family
99 weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
Frequency
945MHz
Gain
14.7dB
Gate to Source Voltage (Vgs)
20V
Max Frequency
1GHz
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PD57070-E Description

RF Mosfet 28 V 250 mA 945MHz 14.7dB 70W PowerSO-10RF (Formed Lead)

FAQ

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