STMicroelectronics_SCTW100N65G2AG

STMicroelectronics
SCTW100N65G2AG  
Single FETs, MOSFETs

STMicroelectronics
SCTW100N65G2AG
278-SCTW100N65G2AG
Ersa
STMicroelectronics-SCTW100N65G2AG-datasheets-6497582.pdf
SICFET N-CH 650V 100A HIP247
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    SCTW100N65G2AG Description

    STMicroelectronics' SCTW100N65G2AG is a high-power, high-voltage MOSFET transistor designed for use in a variety of applications. Here is a brief description of the model, its features, and potential applications:

    Description:

    The SCTW100N65G2AG is an N-channel, high-voltage MOSFET transistor from STMicroelectronics. It is designed to operate at high voltages and handle high power levels, making it suitable for use in a variety of applications.

    Features:

    • N-channel, high-voltage MOSFET transistor
    • Designed for high-power applications
    • Rated for a maximum drain-source voltage (VDS) of 650V
    • Rated for a continuous drain current (ID) of 100A
    • Low on-state resistance (RDS(on)) of 0.06 ohms maximum
    • High switching speed and low switching losses
    • Suitable for use in a wide range of applications

    Applications:

    The SCTW100N65G2AG is suitable for use in a variety of high-power applications, including:

    • Motor control and drive circuits
    • Power supply circuits
    • Inverter circuits
    • Battery management systems
    • Renewable energy systems, such as solar power inverters and wind power converters
    • Electric vehicle (EV) charging stations
    • Industrial control systems

    Overall, the SCTW100N65G2AG is a high-power, high-voltage MOSFET transistor that offers excellent performance and reliability in a wide range of applications. Its low on-state resistance and high switching speed make it an ideal choice for use in power electronics circuits where efficiency and performance are critical.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Qualification
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    Maximum Operating Temperature
    RoHS Status
    Typical Gate Threshold Voltage (V)
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Material
    Transistor Polarity
    Package Length
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    ECCN (EU)
    RoHs compliant

    SCTW100N65G2AG Documents

    Download datasheets and manufacturer documentation for SCTW100N65G2AG

    Ersa SCTW100N65G2AG      
    Ersa Standard outer labelling 15/Nov/2023      
    Ersa TO247 Frame 24-Feb-2022      

    Shopping Guide

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