STMicroelectronics_SCTW100N65G2AG
original

STMicroelectronics
SCTW100N65G2AG

278-SCTW100N65G2AG
PDF Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
52 Weeks

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SCTW100N65G2AG Description

STMicroelectronics' SCTW100N65G2AG is a high-power, high-voltage MOSFET transistor designed for use in a variety of applications. Here is a brief description of the model, its features, and potential applications:

Description:

The SCTW100N65G2AG is an N-channel, high-voltage MOSFET transistor from STMicroelectronics. It is designed to operate at high voltages and handle high power levels, making it suitable for use in a variety of applications.

Features:

  • N-channel, high-voltage MOSFET transistor
  • Designed for high-power applications
  • Rated for a maximum drain-source voltage (VDS) of 650V
  • Rated for a continuous drain current (ID) of 100A
  • Low on-state resistance (RDS(on)) of 0.06 ohms maximum
  • High switching speed and low switching losses
  • Suitable for use in a wide range of applications

Applications:

The SCTW100N65G2AG is suitable for use in a variety of high-power applications, including:

  • Motor control and drive circuits
  • Power supply circuits
  • Inverter circuits
  • Battery management systems
  • Renewable energy systems, such as solar power inverters and wind power converters
  • Electric vehicle (EV) charging stations
  • Industrial control systems

Overall, the SCTW100N65G2AG is a high-power, high-voltage MOSFET transistor that offers excellent performance and reliability in a wide range of applications. Its low on-state resistance and high switching speed make it an ideal choice for use in power electronics circuits where efficiency and performance are critical.

FAQ

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SCTW100N65G2AG is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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