STMicroelectronics_SD56120M
original

STMicroelectronics
SD56120M

285-SD56120M
PDF Datasheet
120W RF LDMOS Transistor, 65V, 860MHz, N-CH

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
M
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
860MHz
Gain
16dB
Gate to Source Voltage (Vgs)
20V
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SD56120M Description

RF Mosfet 32 V 400 mA 860MHz 16dB 120W M252

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