STMicroelectronics_STB12NM50ND
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STMicroelectronics
STB12NM50ND

278-STB12NM50ND
500V 11A N-CH MOSFET D2PAK, 290mR Rds(on)

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
290mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
25V
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STB12NM50ND Description

STB12NM50ND Description

The STB12NM50ND is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications in the electronics industry. With a drain-to-source voltage of 500V and a continuous drain current of 11A at 25°C, this device offers excellent performance and reliability. The STB12NM50ND features a D2PAK package, making it suitable for surface mount applications.

STB12NM50ND Features

  • High Voltage and Current Ratings: The STB12NM50ND can handle drain-to-source voltages up to 500V and continuous drain currents of 11A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 380mOhm at 5.5A and 10V, this MOSFET provides efficient power management and reduced power loss.
  • Low Gate Charge: The maximum gate charge is 30nC at 10V, enabling fast switching and reduced power consumption in high-frequency applications.
  • Robust Operating Temperature Range: The STB12NM50ND can operate at junction temperatures up to 150°C, making it suitable for harsh environments.
  • Compliance with Industry Standards: This device is compliant with the RoHS3 directive, making it an environmentally friendly choice for electronic designs.
  • Surface Mount Packaging: The D2PAK package allows for easy integration into surface mount applications, reducing overall footprint and improving manufacturing efficiency.

STB12NM50ND Applications

The STB12NM50ND is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  • Power Supplies: The high voltage and current ratings make this MOSFET suitable for power supply designs, particularly in applications requiring efficient power management.
  • Motor Control: The STB12NM50ND can be used in motor control applications, providing efficient switching and power management for electric motors.
  • Industrial Automation: In industrial automation systems, this MOSFET can be used to control high-power devices, ensuring reliable operation in demanding environments.
  • Automotive Applications: The robust operating temperature range and high voltage ratings make the STB12NM50ND suitable for automotive applications, such as electric vehicle charging systems.

Conclusion of STB12NM50ND

The STB12NM50ND is a high-performance N-Channel MOSFET from STMicroelectronics, offering excellent voltage and current handling capabilities. Its low on-resistance, low gate charge, and compliance with industry standards make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and automotive systems. Despite being classified as obsolete, this device continues to provide reliable performance and can be a valuable component in existing designs.

FAQ

What voltage specification is listed for STB12NM50ND?
The listed voltage-related specification for STB12NM50ND is 500V.
What operating temperature range does STB12NM50ND support?
What is STB12NM50ND?
What is the mounting type of STB12NM50ND?
Are there related or alternative parts for STB12NM50ND?
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