STMicroelectronics_STD3LN62K3

STMicroelectronics
STD3LN62K3  
Single FETs, MOSFETs

STMicroelectronics
STD3LN62K3
278-STD3LN62K3
Ersa
STMicroelectronics-STD3LN62K3-datasheets-3102877.pdf
MOSFET N-CH 620V 2.5A DPAK
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STD3LN62K3 Description

STD3LN62K3 Description

The STD3LN62K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.5A at 25°C, this device is well-suited for demanding power electronics applications. The STD3LN62K3 features a low on-resistance (Rds On) of 3Ω at 1.25A and 10V, ensuring efficient power dissipation and minimal power loss. Additionally, the device has a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 4.5V at 50µA, providing precise control over the device's operation.

STD3LN62K3 Features

  • 620V drain-to-source voltage (Vdss) for high-voltage applications
  • 2.5A continuous drain current (Id) at 25°C for efficient power handling
  • Low on-resistance (Rds On) of 3Ω at 1.25A and 10V for minimal power loss
  • ±30V maximum gate-source voltage (Vgs) for precise control
  • 4.5V threshold voltage (Vgs(th)) at 50µA for reliable operation
  • DPAK package for efficient heat dissipation and easy integration
  • Surface mount technology for compact design and high-density PCB layouts
  • REACH unaffected and RoHS3 compliant for environmental compliance
  • Moisture Sensitivity Level (MSL) of 1 for unlimited storage and handling

STD3LN62K3 Applications

The STD3LN62K3 is ideal for a variety of high-voltage and high-current applications, including:

  1. Power supplies and converters
  2. Motor drives and control
  3. Automotive electronics
  4. Industrial control systems
  5. Renewable energy systems, such as solar inverters and wind power converters

Conclusion of STD3LN62K3

The STD3LN62K3 is a robust and reliable N-Channel MOSFET from STMicroelectronics, offering high voltage and current handling capabilities in a compact DPAK package. Its low on-resistance and precise gate control make it an excellent choice for demanding power electronics applications. While the device is now considered obsolete, it remains a popular choice for legacy systems and applications where its performance and features are still relevant. The STD3LN62K3's REACH unaffected and RoHS3 compliant status ensures environmental compliance, while its MSL of 1 allows for unlimited storage and handling.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Mounting Style
Unit Weight
Configuration
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
Fall Time
RoHS
Qg - Gate Charge
Vds - Drain-Source Breakdown Voltage
Tradename
Rise Time
Transistor Type
Number of Channels
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STD3LN62K3 Documents

Download datasheets and manufacturer documentation for STD3LN62K3

Ersa Product / Process Change Notification (PDF)      

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