STMicroelectronics' STGB10NC60KDT4 is a high-power, high-voltage N-channel MOSFET transistor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.
The STGB10NC60KDT4 is an N-channel MOSFET with a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 100A. It features a low on-state resistance (Rds(on)) of 4.5mΩ, which helps to minimize power dissipation and improve efficiency. The device is available in a TO-220FB package, which is suitable for use in high-power applications.
The STGB10NC60KDT4 is suitable for use in a wide range of power electronic applications, including:
In summary, the STGB10NC60KDT4 is a high-power, high-voltage N-channel MOSFET transistor that offers excellent performance and reliability in a wide range of power electronic applications. Its low on-state resistance, high input impedance, and built-in protection features make it an ideal choice for motor control, power supplies, renewable energy systems, battery management systems, and industrial control applications.
Download datasheets and manufacturer documentation for STGB10NC60KDT4