STMicroelectronics_STGB10NC60KDT4

STMicroelectronics
STGB10NC60KDT4  
Single IGBTs

STMicroelectronics
STGB10NC60KDT4
279-STGB10NC60KDT4
IGBT 600V 20A 65W D2PAK
In Stock : 1636

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    STGB10NC60KDT4 Description

    STMicroelectronics' STGB10NC60KDT4 is a high-power, high-voltage N-channel MOSFET transistor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

    Description:

    The STGB10NC60KDT4 is an N-channel MOSFET with a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 100A. It features a low on-state resistance (Rds(on)) of 4.5mΩ, which helps to minimize power dissipation and improve efficiency. The device is available in a TO-220FB package, which is suitable for use in high-power applications.

    Features:

    • High drain-source voltage (Vds) of 600V
    • Continuous drain current (Id) of 100A
    • Low on-state resistance (Rds(on)) of 4.5mΩ
    • High input impedance and fast switching speed
    • High thermal stability and low gate charge
    • Built-in protection features, including over-voltage, over-current, and over-temperature protection
    • Suitable for use in high-power applications

    Applications:

    The STGB10NC60KDT4 is suitable for use in a wide range of power electronic applications, including:

    1. Motor control: The device can be used in motor control applications, such as in industrial automation, robotics, and electric vehicles.
    2. Power supplies: The STGB10NC60KDT4 can be used in power supply applications, such as in switching power supplies and uninterruptible power supplies (UPS).
    3. Renewable energy systems: The device can be used in renewable energy systems, such as in solar panel inverters and wind turbine converters.
    4. Battery management systems: The STGB10NC60KDT4 can be used in battery management systems, such as in electric vehicles and energy storage systems.
    5. Industrial control: The device can be used in various industrial control applications, such as in motor drives and power converters.

    In summary, the STGB10NC60KDT4 is a high-power, high-voltage N-channel MOSFET transistor that offers excellent performance and reliability in a wide range of power electronic applications. Its low on-state resistance, high input impedance, and built-in protection features make it an ideal choice for motor control, power supplies, renewable energy systems, battery management systems, and industrial control applications.

    Tech Specifications

    Configuration
    PPAP
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Package / Case
    Typical Collector Emitter Saturation Voltage (V)
    REACH Status
    Channel Type
    Maximum Gate Emitter Voltage (V)
    EU RoHS
    IGBT Type
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Test Condition
    Current - Collector (Ic) (Max)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Standard Package Name
    Current - Collector Pulsed (Icm)
    Pin Count
    Mounting
    Maximum Gate Emitter Leakage Current (uA)
    Gate Charge
    Lead Shape
    SVHC
    HTSUS
    Package
    Reverse Recovery Time (trr)
    PCB changed
    HTS
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Td (on/off) @ 25°C
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Input Type
    Switching Energy
    Maximum Continuous Collector Current (A)
    SVHC Exceeds Threshold
    Package Length
    Series
    Vce(on) (Max) @ Vge, Ic
    Tab
    Power - Max
    Part Status
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    RoHS
    Minimum Operating Temperature
    Length
    Technology
    Continuous Collector Current Ic Max
    Collector-Emitter Saturation Voltage
    Collector- Emitter Voltage VCEO Max
    Continuous Collector Current at 25 C
    Height
    Maximum Operating Temperature
    Pd - Power Dissipation
    USHTS
    Width
    Maximum Gate Emitter Voltage

    STGB10NC60KDT4 Documents

    Download datasheets and manufacturer documentation for STGB10NC60KDT4

    Ersa STGx10NC60KD      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STGB10NC60KD View All Specifications      
    Ersa STGx10NC60KD      
    Ersa D2PAK Lead Modification 04/Oct/2013      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service