The STGP19NC60HD is a high-performance, single insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. This device is part of the PowerMESH™ series, offering superior electrical characteristics and robustness in high-power applications. With a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 40A, the STGP19NC60HD is well-suited for demanding power electronics applications.
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The STGP19NC60HD is ideal for a wide range of high-power applications, including:
The STGP19NC60HD from STMicroelectronics is a powerful, reliable, and efficient IGBT designed for high-power applications. Its unique features, such as low on-state voltage drop, fast switching times, and robust design, make it an excellent choice for demanding power electronics applications. With its compliance with environmental standards and ease of integration, the STGP19NC60HD is a top choice for engineers looking to optimize their designs for performance and reliability.
Download datasheets and manufacturer documentation for STGP19NC60HD