STMicroelectronics_STP33N60DM2
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STMicroelectronics
STP33N60DM2

278-STP33N60DM2
PDF Datasheet
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
16 Weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Eccn Code
EAR99
REACH
not_compliant
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STP33N60DM2 Description

STP33N60DM2 Description

The STP33N60DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to offer superior performance and reliability in various electronic applications. With a drain-to-source voltage of 600V and a continuous drain current of 24A at 25°C, this MOSFET is well-suited for applications requiring high voltage and current handling capabilities. The device is packaged in a through-hole TO220 package, making it ideal for easy integration into various circuit designs.

STP33N60DM2 Features

  • High Voltage and Current Handling: The STP33N60DM2 can handle a drain-to-source voltage of up to 600V and a continuous drain current of 24A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds(on)) of 130mOhm at 12A and 10V, the STP33N60DM2 offers low power dissipation and high efficiency.
  • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation and compatibility with various gate drive circuits.
  • Low Gate Charge: The maximum gate charge (Qg) of 43nC at 10V helps reduce switching losses and improve overall efficiency.
  • Compliance with Industry Standards: The STP33N60DM2 is compliant with the REACH regulation, ensuring environmental safety, and is RoHS3 compliant, making it suitable for use in electronic products.
  • Moisture Sensitivity Level (MSL) 1: The device has an MSL rating of 1, indicating unlimited storage time before reflow soldering, which simplifies handling and storage.

STP33N60DM2 Applications

The STP33N60DM2 is ideal for a wide range of applications, including:

  • Power Supplies: Due to its high voltage and current handling capabilities, the STP33N60DM2 is well-suited for use in power supply designs, such as switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
  • Motor Control: The device's low on-resistance and high current handling make it an excellent choice for motor control applications, including industrial motor drives and electric vehicle (EV) motor control systems.
  • Industrial Automation: The STP33N60DM2's robust performance and reliability make it suitable for use in industrial automation systems, such as robotic arms and conveyor systems.
  • Renewable Energy: The device's high voltage and current ratings make it ideal for use in renewable energy applications, such as solar inverters and wind turbine control systems.

Conclusion of STP33N60DM2

The STP33N60DM2 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive. Its compliance with industry standards and moisture sensitivity level make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and renewable energy systems. With its unique features and advantages over similar models, the STP33N60DM2 is a reliable and efficient solution for demanding electronic applications.

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