Infineon Technologies_BSZ12DN20NS3GATMA1

Infineon Technologies
BSZ12DN20NS3GATMA1  
Single FETs, MOSFETs

BSZ12DN20NS3GATMA1
278-BSZ12DN20NS3GATMA1
Ersa
Infineon Technologies-BSZ12DN20NS3GATMA1-datasheets-6967901.pdf
MOSFET N-CH 200V 11.3A 8TSDSON
In Stock : 4894

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ISO9001
Quality Policy
ISO45001
ISO14001

BSZ12DN20NS3GATMA1 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the BSZ12DN20NS3GATMA1 belongs to can be classified under the Discrete Semiconductors. BSZ12DN20NS3GATMA1 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. BSZ12DN20NS3GATMA1 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Typical Switch Charge (nC)
Standard Package Name
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
SVHC
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Typical Gate Threshold Voltage (V)
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

BSZ12DN20NS3GATMA1 Documents

Download datasheets and manufacturer documentation for BSZ12DN20NS3GATMA1

Ersa BSZ12DN20NS3G      
Ersa Part Number Guide      
Ersa OptiMOS™ Power MOSFET 200V N-Channel Spice Model      
Ersa RoHS Certificate      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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