onsemi

FDN335N  

Single FETs, MOSFETs

FDN335N Description

The FDN335N from onsemi is an N-channel PowerTrench® MOSFET designed for high-efficiency power management in compact applications. With a 20V drain-to-source voltage (Vdss) and 1.7A continuous drain current (Id), it offers robust performance in low-voltage circuits. The device leverages MOSFET (Metal Oxide) technology, ensuring low on-resistance (Rds(on) of 70mOhm @ 1.7A, 4.5V) and fast switching characteristics, making it ideal for power-sensitive designs. Packaged in a SUPERSOT3 form factor, it is optimized for surface-mount applications where space and thermal efficiency are critical.

FDN335N Features

• Low Gate Charge (Qg): 5nC @ 4.5V minimizes switching losses, enhancing efficiency in high-frequency applications.
• Low Input Capacitance (Ciss): 310pF @ 10V reduces drive requirements and improves transient response.
• Wide Drive Voltage Range: Operates efficiently at 2.5V to 4.5V, compatible with low-voltage logic.
• Thermally Efficient: 500mW power dissipation (Ta) ensures reliable operation under moderate loads.
• Robust Protection: ±8V maximum gate-source voltage (Vgs) safeguards against voltage spikes.
• Industry-Standard Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for global usability.

FDN335N Applications

The FDN335N excels in:

• DC-DC Converters: Optimized for synchronous buck/boost topologies due to low Rds(on) and fast switching.
• Load Switching: Ideal for portable devices (e.g., smartphones, tablets) where space and efficiency are paramount.
• Battery Management: Low Vgs(th) (1.5V @ 250µA) enables precise control in power path protection circuits.
• Motor Drivers: Suitable for small brushed DC motors in robotics or consumer electronics.
• Power Distribution: Used in hot-swap and OR-ing applications thanks to its low conduction losses.

Conclusion of FDN335N

The FDN335N stands out as a high-performance, space-efficient MOSFET for modern low-power applications. Its PowerTrench® technology, combined with low gate charge and on-resistance, ensures superior efficiency in switching circuits. Whether for portable electronics, power supplies, or motor control, this MOSFET delivers reliability and thermal performance in a compact SUPERSOT3 package. Its compliance with environmental and industry standards further solidifies its suitability for global designs.

FDN335N Documents

Download datasheets and manufacturer documentation for FDN335N

PCN Assembly/Origin :

Mult Dev Site Chgs 2/Oct/2020      

Datasheets :

FDN335N Datasheet      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       Material Declaration FDN335N