The STB55NF06T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high efficiency and robustness. This device features a drain-to-source voltage of 60V, continuous drain current of 50A at 25°C, and a maximum power dissipation of 110W. With a low on-resistance of 18mOhm at 27.5A and 10V gate-source voltage, the STB55NF06T4 offers superior performance in power management and motor control applications.
Vgs (Max): ±20V - Offers wide gate voltage range for compatibility with various gate drivers.
Rds On (Max): 18mOhm @ 27.5A, 10V - Ensures low on-resistance for minimal power dissipation.
Vgs(th) (Max): 4V @ 250µA - Provides a low threshold voltage for easy gate drive.
Mounting Type: Surface Mount - Facilitates integration into compact and dense PCB layouts.
Moisture Sensitivity Level (MSL): 1 (Unlimited) - Allows for flexible handling and storage without strict moisture control.
STB55NF06T4 Applications
The STB55NF06T4 is ideal for a variety of applications where high efficiency, low power loss, and robust performance are critical:
Power Management: In power supply designs, the STB55NF06T4's low on-resistance and high efficiency help reduce power dissipation and improve overall system performance.
Motor Control: The device's high current capability and fast switching make it suitable for motor drive applications, such as electric vehicles, industrial automation, and robotics.
Industrial Automation: The STB55NF06T4's robustness and reliability make it a preferred choice for demanding industrial applications, including motor drives, power conversion, and control systems.
Conclusion of STB55NF06T4
The STB55NF06T4 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding power management and motor control applications. Its advanced STripFET™ II technology, low on-resistance, and high efficiency make it an ideal choice for applications requiring high performance and reliability. With its wide gate voltage range, low threshold voltage, and surface mount packaging, the STB55NF06T4 offers a versatile solution for a variety of applications in power management, motor control, and industrial automation.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STB55NF06T4 Documents
Download datasheets and manufacturer documentation for STB55NF06T4
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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