STMicroelectronics_STD60NF55LT4

STMicroelectronics
STD60NF55LT4  
Single FETs, MOSFETs

STMicroelectronics
STD60NF55LT4
278-STD60NF55LT4
MOSFET N-CH 55V 60A DPAK
In Stock : 8901

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STD60NF55LT4 Description

The STD60NF55LT4 is a high-power, high-voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The STD60NF55LT4 is a surface-mount MOSFET transistor with a drain-source voltage (VDS) of 550V and a continuous drain current (ID) of 60A. It has a low on-state resistance (RDS(on)) of 0.04 Ohms, which helps to minimize power dissipation and improve efficiency in power electronic circuits.

Features:

  • High-power, high-voltage N-channel MOSFET transistor
  • Drain-source voltage (VDS) of 550V
  • Continuous drain current (ID) of 60A
  • Low on-state resistance (RDS(on)) of 0.04 Ohms
  • Surface-mount package for easy integration into power electronic circuits
  • Designed for use in a variety of power electronic applications

Applications:

The STD60NF55LT4 is suitable for use in a range of power electronic applications, including:

  • Motor control systems for industrial and automotive applications
  • Power supplies for telecommunications, computing, and other electronic equipment
  • Energy management systems for renewable energy and smart grid applications
  • Battery management systems for electric vehicles and energy storage systems
  • High-power switching applications in industrial and commercial equipment

Overall, the STD60NF55LT4 is a high-performance MOSFET transistor that offers excellent electrical characteristics and reliability for use in a wide range of power electronic applications. Its low on-state resistance and high power rating make it an ideal choice for applications that require efficient and reliable power switching.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD60NF55LT4 Documents

Download datasheets and manufacturer documentation for STD60NF55LT4

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa STD60NF55L/-1      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD60NF55L View All Specifications      
Ersa STD60NF55L/-1      

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