STMicroelectronics

STGB10M65DF2  

Single IGBTs

STGB10M65DF2 Description

The STGB10M65DF2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. It is designed to provide efficient power management in various applications. With a maximum collector-emitter breakdown voltage of 650V and a maximum collector current of 20A, this device is well-suited for high-power applications. The STGB10M65DF2 features a Trench Field Stop IGBT type, which offers improved efficiency and reduced conduction losses.

STGB10M65DF2 Features

• Technical Specifications: The STGB10M65DF2 boasts a reverse recovery time of 96ns, ensuring fast switching capabilities. It has a maximum Vce(on) of 2V at 15V, 10A, and a switching energy of 120µJ (on) and 270µJ (off), contributing to energy efficiency. The device also has a low gate charge of 28 nC, facilitating quick gate control.
• Performance Benefits: The STGB10M65DF2's Trench Field Stop IGBT technology provides superior performance over similar models, with reduced conduction and switching losses. Its low Vce(on) and switching energy contribute to higher efficiency in power conversion applications.
• Unique Advantages: This IGBT is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level of 1 (unlimited), making it suitable for a wide range of environments. The device's standard input type and surface mount packaging make it easy to integrate into various designs.

STGB10M65DF2 Applications

The STGB10M65DF2 is ideal for applications requiring high power and efficient power management, such as:

• Industrial Motor Control: Its high voltage and current ratings make it suitable for controlling industrial motors.
• Power Supplies: The device's efficiency and fast switching capabilities are beneficial in power supply designs.
• Renewable Energy Systems: The STGB10M65DF2 can be used in solar inverters and wind power systems for efficient energy conversion.

Conclusion of STGB10M65DF2

The STGB10M65DF2 is a high-performance IGBT from STMicroelectronics that offers superior efficiency and fast switching capabilities. Its unique features, such as Trench Field Stop technology and low switching energy, make it an excellent choice for high-power applications. The device's compliance with industry standards and its suitability for various environments further enhance its appeal. The STGB10M65DF2 is a reliable and efficient solution for power management in industrial, power supply, and renewable energy applications.

STGB10M65DF2 Documents

Download datasheets and manufacturer documentation for STGB10M65DF2

Datasheets :

STGB10M65DF2      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

STGB10M65DF2