The STGP10NC60KD is a high-performance, single insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. This device is part of the PowerMESH™ series and is housed in a robust TO220 package, making it suitable for a wide range of power electronics applications. With a maximum collector-emitter breakdown voltage of 600V, a continuous collector current of 20A, and a maximum power dissipation of 65W, the STGP10NC60KD offers excellent electrical performance and reliability.
Technical Specifications:
Environmental Compliance:
Package and Mounting:
Unique Features:
The STGP10NC60KD is ideal for various high-power applications, including:
The STGP10NC60KD from STMicroelectronics is a powerful, high-performance IGBT designed for demanding power electronics applications. Its unique combination of high voltage and current ratings, fast switching capabilities, and low on-state voltage drop make it an excellent choice for a wide range of applications, including industrial motor control, power supplies, renewable energy systems, and electric vehicles. With its compliance with environmental regulations and robust packaging, the STGP10NC60KD offers a reliable and efficient solution for high-power electronics design.
Download datasheets and manufacturer documentation for STGP10NC60KD