STMicroelectronics_STGYA75H120DF2

STMicroelectronics
STGYA75H120DF2  
Single IGBTs

STMicroelectronics
STGYA75H120DF2
279-STGYA75H120DF2
Ersa
STMicroelectronics-STGYA75H120DF2-datasheets-223765.pdf
TRENCH GATE FIELD-STOP 1200 V, 7
In Stock : 490

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $9.92689
    • $9.93
    • 10+
    • $9.38041
    • $93.8
    • 30+
    • $8.92004
    • $267.6
    • 90+
    • $8.51929
    • $766.74
    ADD TO CART
    QUICK ORDER
    $9.92689    $9.93
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STGYA75H120DF2 Description

    STGYA75H120DF2 is a high-power IGBT (Insulated Gate Bipolar Transistor) module offered by STMicroelectronics. It is designed for use in high-power applications, such as industrial drives, power supplies, and renewable energy systems. Here's a brief description of the model, its features, and potential applications:

    Description:

    The STGYA75H120DF2 is a high-power IGBT module that features a half-bridge configuration with two IGBTs and two diodes in a compact and robust package. The module is designed to provide high efficiency, fast switching, and excellent thermal performance.

    Features:

    1. High Power: The module is designed for high-power applications, with a continuous current rating of up to 75 A and a voltage rating of 1200 V.
    2. Half-Bridge Configuration: The module features a half-bridge configuration, which consists of two IGBTs and two diodes, allowing for efficient and compact power conversion.
    3. High Efficiency: The module is designed for high efficiency, minimizing power losses and reducing the overall system's operating costs.
    4. Fast Switching: The IGBTs in the module offer fast switching times, enabling high-frequency operation and improved performance in various applications.
    5. Robust Package: The module features a robust package that provides excellent thermal performance and protection against harsh environmental conditions.
    6. Integrated Protection Features: The module includes integrated protection features, such as over-temperature and over-current protection, to enhance system reliability and safety.

    Applications:

    1. Industrial Drives: The STGYA75H120DF2 can be used in variable frequency drives (VFDs) for controlling the speed and torque of motors in various industrial applications, such as pumps, fans, and conveyor systems.
    2. Power Supplies: The module is suitable for use in power supply applications, such as uninterruptible power supplies (UPS) and power factor correction systems, where high efficiency and reliability are crucial.
    3. Renewable Energy Systems: The STGYA75H120DF2 can be used in renewable energy systems, such as solar inverters and wind turbine converters, to efficiently convert and control the power generated by these systems.
    4. Electric Vehicles (EVs): The module can be used in the power electronics of electric vehicles, such as traction inverters and onboard chargers, to improve the overall efficiency and performance of the vehicle.
    5. Motor Control: The module can be used in motor control applications, such as elevators and cranes, to provide precise and efficient control of the motor's speed and torque.

    In summary, the STGYA75H120DF2 is a high-power IGBT module from STMicroelectronics that offers a combination of high efficiency, fast switching, and robust packaging. It is suitable for a wide range of high-power applications, including industrial drives, power supplies, renewable energy systems, electric vehicles, and motor control.

    Tech Specifications

    Unit Weight
    Configuration
    PPAP
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    RoHS
    Package / Case
    Technology
    Continuous Collector Current Ic Max
    Typical Collector Emitter Saturation Voltage (V)
    REACH Status
    Channel Type
    Maximum Gate Emitter Voltage (V)
    EU RoHS
    IGBT Type
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Test Condition
    Current - Collector (Ic) (Max)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Current - Collector Pulsed (Icm)
    Maximum Gate Emitter Leakage Current (uA)
    Gate Charge
    Collector- Emitter Voltage VCEO Max
    HTSUS
    Package
    USHTS
    Maximum Gate Emitter Voltage
    Reverse Recovery Time (trr)
    HTS
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Td (on/off) @ 25°C
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Collector-Emitter Saturation Voltage
    Mfr
    Continuous Collector Current at 25 C
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    Input Type
    Switching Energy
    Maximum Continuous Collector Current (A)
    Gate-Emitter Leakage Current
    Minimum Operating Temperature
    Series
    Vce(on) (Max) @ Vge, Ic
    Power - Max
    Part Status
    Pd - Power Dissipation
    Base Product Number
    Supplier Package
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STGYA75H120DF2 Documents

    Download datasheets and manufacturer documentation for STGYA75H120DF2

    Ersa STGYA75H120DF2      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service