STMicroelectronics

STW12NK95Z

STW12NK95Z Description

The STW12NK95Z from STMicroelectronics is a 950V N-channel SuperMESH™ MOSFET designed for high-voltage switching applications. With a continuous drain current (Id) of 10A (at Tc=25°C) and a low on-resistance (Rds(on)) of 900mΩ at 10V gate drive, this device offers efficient power handling in demanding environments. Its input capacitance (Ciss) of 3500pF and gate charge (Qg) of 113nC ensure fast switching performance, making it suitable for high-frequency applications. The TO-247-3 package provides robust thermal management, supporting a maximum power dissipation of 230W.

STW12NK95Z Features

• High Voltage Rating: 950V Vdss for industrial and automotive applications.
• Low Rds(on): 900mΩ @ 10V Vgs minimizes conduction losses.
• Fast Switching: Optimized gate charge (Qg) and capacitance (Ciss) for reduced switching losses.
• Robust Construction: TO-247-3 package ensures high thermal performance.
• Wide Gate Drive Range: ±30V Vgs(max) for flexible drive circuitry.
• Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) moisture sensitivity.
• SuperMESH™ Technology: Enhances efficiency and reliability in high-voltage applications.

STW12NK95Z Applications

• Switched-Mode Power Supplies (SMPS): High-efficiency PFC and DC-DC converters.
• Industrial Motor Drives: High-voltage inverters and motor control systems.
• Renewable Energy Systems: Solar inverters and wind power converters.
• Automotive Electronics: EV charging systems and high-voltage DC-DC converters.
• Lighting: High-power LED drivers and ballasts.

Conclusion of STW12NK95Z

The STW12NK95Z is a high-performance 950V MOSFET leveraging SuperMESH™ technology for superior efficiency and reliability in high-voltage applications. Its low Rds(on), fast switching, and robust thermal performance make it ideal for power supplies, motor drives, and renewable energy systems. While marked as obsolete, its specifications ensure continued suitability for legacy designs requiring high-voltage switching with minimal losses. For engineers seeking a balance of voltage endurance, power handling, and switching speed, this MOSFET remains a compelling choice.