Texas Instruments_TPS1100DR
original

Texas Instruments
TPS1100DR

278-TPS1100DR
PDF Datasheet
Single P-channel Enhancement-Mode MOSFET 8-SOIC
6 Weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
1.6A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
15V
Fall Time
10ns
Gate to Source Voltage (Vgs)
2V
Lead Free
Lead Free
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TPS1100DR Description

TPS1100DR Description

The TPS1100DR is a high-performance MOSFET (Metal Oxide) P-CH 15V 1.6A 8SOIC manufactured by Texas Instruments. This Single FET is designed for applications requiring high power dissipation and low gate charge. With a maximum gate charge of 5.45 nC @ 10 V and a drain-to-source voltage of 15 V, the TPS1100DR offers superior performance in various electronic systems.

TPS1100DR Features

  • Active Product Status: The TPS1100DR is currently in production and readily available for use.
  • Low Gate Charge (Qg): 5.45 nC @ 10 V, reducing switching losses and improving efficiency.
  • High Drain to Source Voltage (Vdss): 15 V, suitable for high-voltage applications.
  • Low Rds On (Max): 180 mOhm @ 1.5A, 10V, ensuring low on-resistance and minimal power loss.
  • Compliant with REACH and RoHS3: Ensuring environmental and safety standards are met.
  • Low Vgs(th) (Max): 1.5V @ 250µA, allowing for easy gate drive and control.
  • High Current - Continuous Drain (Id): 1.6A (Ta) @ 25°C, capable of handling high current loads.
  • Surface Mount Technology: Facilitates integration into compact and densely populated PCB designs.

TPS1100DR Applications

The TPS1100DR is ideal for various applications where high power dissipation, low gate charge, and high voltage are required. Some specific use cases include:

  1. Power Management Systems: Due to its high power dissipation capability, the TPS1100DR is suitable for power management systems in consumer electronics, industrial equipment, and automotive applications.
  2. Motor Control: The low gate charge and high drain current make it an excellent choice for motor control applications, where efficient switching and high current handling are crucial.
  3. Switching Regulators: The TPS1100DR's low on-resistance and high voltage rating make it suitable for use in switching regulators, providing efficient power conversion and regulation.

Conclusion of TPS1100DR

The TPS1100DR from Texas Instruments is a high-performance MOSFET that offers a unique combination of low gate charge, high drain-to-source voltage, and high power dissipation. Its compliance with REACH and RoHS3 standards, along with its surface mount technology, makes it an ideal choice for a wide range of applications, including power management systems, motor control, and switching regulators. With its superior technical specifications and performance benefits, the TPS1100DR stands out as a reliable and efficient solution in the electronics industry.

FAQ

What is the mounting type of TPS1100DR?
TPS1100DR uses a Surface Mount mounting style based on the listed product specifications.
What is the standard lead time for TPS1100DR?
Is TPS1100DR currently in stock?
Does TPS1100DR have quantity-based pricing?
What operating temperature range does TPS1100DR support?
Availability (In Stock : 116 )
Quantity Unit Price Ext. Price
1+ $1.54628 $1.55
10+ $1.30285 $13.03
30+ $1.16743 $35.02
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