


Texas Instruments
TPS1101DR
278-TPS1101DR
PDF Datasheet
Single P-channel Enhancement-Mode MOSFET 8-SOIC
6 Weeks
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Responsible qualityTech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
2.3A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
15V
Fall Time
5.5ns
Gate to Source Voltage (Vgs)
2V
Lead Free
Lead Free
TPS1101DR Description
P-Channel 15 V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC
FAQ
What operating temperature range does TPS1101DR support?
TPS1101DR has an operating temperature range of 125°C.
What package or case is TPS1101DR available in?
Are there related or alternative parts for TPS1101DR?
What is the mounting type of TPS1101DR?
Is TPS1101DR currently in stock?



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