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SI1402DH-T1-E3
285-SI1402DH-T1-E3
PDF Datasheet
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Tech Specifications
Continuous Drain Current (ID)
2.7A
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Length
2mm
Max Operating Temperature
150°C
SI1402DH-T1-E3 Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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