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Tech Specifications
Package/Case
TSOP
Continuous Drain Current (ID)
1.8A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
145mR
Drain to Source Voltage (Vdss)
20V
Fall Time
30ns
Gate to Source Voltage (Vgs)
8V
Max Operating Temperature
150°C
SI3911DV-T1-GE3 Description
MOSFET 20V 2.2A 1.15W 145mohm @ 4.5V
FAQ
What is SI3911DV-T1-GE3?
SI3911DV-T1-GE3 is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is SI3911DV-T1-GE3 currently in stock?
What voltage specification is listed for SI3911DV-T1-GE3?
Are there related or alternative parts for SI3911DV-T1-GE3?
What is the mounting type of SI3911DV-T1-GE3?
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