Vishay_SIB417DK-T1-GE3
original

Vishay
SIB417DK-T1-GE3

285-SIB417DK-T1-GE3
P-CH MOSFET, -8V, 5.6A, 52mR, SC-82

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Tech Specifications

Package/Case
SC
Continuous Drain Current (ID)
5.6A
Drain to Source Resistance
52mR
Drain to Source Voltage (Vdss)
-8V
Dual Supply Voltage
8V
Fall Time
18ns
Gate to Source Voltage (Vgs)
5V
Input Capacitance
675pF
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SIB417DK-T1-GE3 Description

P-CH MOSFET, -8V, 5.6A, 52mR, SC-82

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