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Responsible qualityTech Specifications
Package/Case
SMD/SMT
Continuous Drain Current (ID)
3.6A
Drain to Source Voltage (Vdss)
30V
FET Type
N and P-Channel
Input Capacitance
435pF
Max Power Dissipation
2.6W
Mount
Surface Mount
Package Quantity
1
SI5511DC-T1-GE3 Description
MOSFET N/P-CH 30V 4A 1206-8
FAQ
What voltage specification is listed for SI5511DC-T1-GE3?
The listed voltage-related specification for SI5511DC-T1-GE3 is 30V.
Is SI5511DC-T1-GE3 currently in stock?
What is the mounting type of SI5511DC-T1-GE3?
Are there related or alternative parts for SI5511DC-T1-GE3?
What is SI5511DC-T1-GE3?



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