Vishay_SIB419DK-T1-GE3
original

Vishay
SIB419DK-T1-GE3

285-SIB419DK-T1-GE3
P-Channel MOSFET, 12V, 9A, 89mR, SC, SMT

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Tech Specifications

Package/Case
SC
Continuous Drain Current (ID)
9A
Drain to Source Resistance
89mR
Drain to Source Voltage (Vdss)
-12V
Dual Supply Voltage
12V
Fall Time
9ns
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
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SIB419DK-T1-GE3 Description

P-Channel MOSFET, 12V, 9A, 89mR, SC, SMT

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