onsemi

FDG6317NZ

FDG6317NZ is a N-channel PowerTrench MOSFET from ON Semiconductor. It is designed for low voltage, high current applications and offers high efficiency and fast switching performance.

Description:

The FDG6317NZ is a N-channel enhancement mode field effect transistor (FET) that utilizes ON Semiconductor's proprietary PowerTrench technology. This technology provides a cell structure that is specifically designed to minimize on-state resistance while maximizing switching speed. The device is available in a TO-220AB package, making it suitable for a wide range of applications.

Features:

• Low on-state resistance (RDS(on)): 4.5 mΩ max at 25°C, 5.5 mΩ max at 125°C
• High current capability: ID = 57A (Tc), 42A (Tj = 100°C)
• Fast switching speed: t(on) = 45 ns, t(off) = 95 ns
• Logic level gate compatible: VGS(th) = 2.5V min
• Avalanche energy rating: 2.5J
• Built-in body diode for efficient reverse recovery
• RoHS compliant

Applications:

The FDG6317NZ is suitable for a wide range of applications that require high efficiency and fast switching performance. Some of the key applications include:

1. Motor control: Brushless DC motor control for industrial and automotive applications.
2. Power supplies: High efficiency power supplies for telecom, computing, and consumer electronics.
3. Lighting: LED lighting applications, including streetlights, floodlights, and high bay lighting.
4. Battery management systems: Charging and discharging circuits for lithium-ion batteries in electric vehicles and energy storage systems.
5. Inverters: Residential and commercial solar panel inverters.

The FDG6317NZ's combination of low on-state resistance, high current capability, and fast switching speed make it an excellent choice for designers looking to optimize the performance and efficiency of their power electronic systems.