onsemi_NSBC114YPDXV6T1G
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onsemi
NSBC114YPDXV6T1G

293-NSBC114YPDXV6T1G
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Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
11 Weeks

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Tech Specifications

Package/Case
SOT-563-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
hFE Min
80
Lead Free
Lead Free
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NSBC114YPDXV6T1G Description

NSBC114YPDXV6T1G Description

The NSBC114YPDXV6T1G is a Bipolar Transistor Array from onsemi, designed for pre-biased NPN/PNP applications. This surface-mount device offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. With a maximum power dissipation of 500mW, it is suitable for low to medium power applications. The device is compliant with RoHS3 and REACH regulations, making it an environmentally friendly choice.

NSBC114YPDXV6T1G Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100mA
    • Collector-Emitter Breakdown Voltage (Vce): 50V
    • Maximum Power Dissipation: 500mW
    • DC Current Gain (hFE): Min 80 @ 5mA, 10V
    • Base Resistor (R1): 10kOhms
    • Emitter Base Resistor (R2): 47kOhms
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Current Collector Cutoff (Max): 500nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Pre-biased NPN/PNP configuration simplifies circuit design
    • Low saturation voltage for improved efficiency
    • High current gain for reliable switching performance
    • Low leakage current for energy-efficient operation
  • Unique Advantages:

    • Surface-mount package for compact design and ease of integration
    • RoHS3 and REACH compliant for environmental sustainability
    • Active product status for ongoing availability and support

NSBC114YPDXV6T1G Applications

The NSBC114YPDXV6T1G is ideal for various applications where a pre-biased NPN/PNP transistor array is required. Some specific use cases include:

  1. Low-Power Switching Applications: Due to its low saturation voltage and high current gain, the NSBC114YPDXV6T1G is suitable for low-power switching circuits, such as in consumer electronics and industrial control systems.
  2. Signal Amplification: The device's high current gain makes it an excellent choice for signal amplification in audio and communication systems.
  3. Automotive Electronics: The NSBC114YPDXV6T1G can be used in automotive electronics for applications like power window control and ignition systems
  4. Industrial Control Systems: The device's ability to handle up to 100mA of collector current makes it suitable for use in industrial control systems, such as motor drivers and sensor interfaces.

Conclusion of NSBC114YPDXV6T1G

The NSBC114YPDXV6T1G from onsemi is a versatile and reliable Bipolar Transistor Array, offering a pre-biased NPN/PNP configuration for simplified circuit design. With its unique combination of technical specifications, performance benefits, and unique advantages, the NSBC114YPDXV6T1G is an excellent choice for a wide range of applications, including low-power switching, signal amplification, automotive electronics, and industrial control systems. Its RoHS3 and REACH compliance further solidifies its position as an environmentally friendly option for electronics manufacturers.

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