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NSBC123JPDXV6T1G
293-NSBC123JPDXV6T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
6 Weeks
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Responsible qualityTech Specifications
Package/Case
SOT-563-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Height
0.55mm
hFE Min
80
NSBC123JPDXV6T1G Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
FAQ
What operating temperature range does NSBC123JPDXV6T1G support?
NSBC123JPDXV6T1G has an operating temperature range of 150°C.
What is the standard lead time for NSBC123JPDXV6T1G?
What voltage specification is listed for NSBC123JPDXV6T1G?
Is NSBC123JPDXV6T1G currently in stock?
What is NSBC123JPDXV6T1G?



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